Substrate Film Deposition Cycles for High Step Coverage Filling
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The challenge of achieving high step coverage and high filling characteristics in film formation during the miniaturization and complication of device geometries in LSI manufacturing processes is not adequately addressed by existing technologies.
Innovation Solution
A substrate processing method involving a cycle of sequentially supplying a first modifying gas, a precursor gas, a second modifying gas, and a reaction gas, with specific control of gas partial pressures and flow rates to enhance film uniformity and filling characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional film formation methods are used, then the manufacturing process is simple, but the film thickness uniformity and filling characteristics are insufficient for miniaturized device geometries
Solution Approach 1:
The film formation process is segmented into multiple sequential gas supply steps: (a) supplying a first modifying gas, (b) supplying a precursor gas, (c) supplying a second modifying gas, and (d) supplying a reaction gas. This segmentation allows precise control over film deposition at different stages, improving thickness uniformity and filling characteristics in miniaturized structures.
Solution Approach 2:
The patent employs periodic cycling through the four gas supply steps (a)-(d) repeatedly during film formation. This periodic action enables controlled deposition cycles that enhance film uniformity and filling characteristics by repeatedly modifying and depositing material in a controlled sequence.
2Manufacturing precision
If conventional film formation methods are used, then the process time is short, but the filling characteristics and step coverage are insufficient
Solution Approach 1:
The first modifying gas is supplied in advance (before precursor gas) to pre-condition the substrate surface and enhance gas distribution into recessed structures. This preliminary action improves filling characteristics by ensuring better precursor gas penetration into deep trenches and vias before the actual deposition begins.
Solution Approach 2:
The patent changes multiple process parameters including gas flow rates, partial pressures, and supply timing for each of the four gases. By optimizing these parameters, the process achieves superior filling characteristics while managing the extended cycle time through efficient parameter coordination.
3Manufacturing precision
If high film thickness uniformity is achieved through multiple gas supply steps, then the film quality improves, but the process complexity increases
Solution Approach 1:
The modifying gases (first and second) act as intermediaries between the precursor gas and the final film structure. These intermediary gases facilitate controlled surface modification and reaction conditions, enabling high film quality through gradual, controlled transformations rather than direct deposition.
Solution Approach 2:
The film formation process creates a composite structure through sequential deposition of materials from different gas sources. The first modifying gas, precursor gas, second modifying gas, and reaction gas each contribute different components or modifications, creating a composite film structure with enhanced properties and uniformity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method improves film thickness uniformity and filling characteristics, reducing impurities and voids, and enhances the electrical characteristics of the film.
Implementation Method 1
supplying a first modifying gas, which is an inorganic halogen element-containing gas
Implementation Method 2
supplying a reaction gas
Implementation Method 3
supplying a precursor gas
Data Source
AI summary
There is provided a technique that includes: performing a cycle a predetermined number of times on the substrate, the cycle including sequentially performing: (a) supplying a first modifying gas, which is an inorganic halogen element-containing gas; (b) supplying a precursor gas; (c) supplying a second modifying gas, which is an inorganic halogen element-containing gas; and (d) supplying a reaction gas.