Substrate Detachment via Interconnect Embrittlement
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Solution Overview
Problem
Current methods for detaching substrates in semiconductor technology often damage the brittle product wafers due to excessive stress and energy expenditure, and can lead to unwanted diffusion of doping elements at elevated temperatures during debonding.
Innovation Solution
A method and system for detaching substrates by cooling and embrittling the interconnect layer, allowing for separation with reduced mechanical force and minimizing energy consumption, using a cooling agent to lower the temperature of the substrate stack and reduce the adhesion properties of the interconnect layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If heating is applied to dissolve adhesion properties during detachment, then the cement bonds between substrates are broken, but excessive stress and energy expenditure occur which can damage the brittle product wafer
Solution Approach 1:
Instead of heating the substrate stack to dissolve adhesion properties, the invention inverts the approach by cooling the stack to below room temperature. This cooling causes the interconnect layer to embrittle and crack, enabling detachment without the high energy consumption and thermal stress associated with heating methods.
Solution Approach 2:
The invention changes the temperature parameter from elevated temperatures (heating) to below room temperature (cooling). This parameter change fundamentally alters the mechanism of adhesion breakdown: rather than thermal softening and dissolution at high temperatures, the low temperature causes embrittlement and cracking of the interconnect layer, achieving detachment with reduced energy consumption and minimal stress on the product wafer.
2Productivity
If heating is applied to break cement bonds during detachment, then separation of substrates is achieved, but unwanted diffusion of doping elements occurs at elevated temperatures
Solution Approach 1:
The invention inverts the conventional heating approach by applying cooling instead. By lowering the temperature to below room temperature, the interconnect layer embrittles and cracks, enabling rapid detachment without reaching elevated temperatures that would cause diffusion of doping elements in semiconductor substrates.
Solution Approach 2:
The temperature parameter is changed from elevated temperatures (which cause diffusion) to below room temperature (which causes embrittlement). This parameter inversion achieves both rapid detachment and prevention of harmful diffusion effects, as the low temperature mechanism cracks the interconnect layer without providing thermal energy for dopant diffusion.
3Ease of operation
If mechanical force is applied to separate substrates, then detachment is achieved, but excessive stress damages the brittle product wafer
Solution Approach 1:
The invention applies preliminary cooling to the substrate stack before detachment, which causes the interconnect layer to embrittle and crack in advance. This preliminary action weakens the bond between substrates, allowing subsequent detachment with minimal mechanical force and thus protecting the brittle product wafer from damage.
Solution Approach 2:
Instead of applying strong mechanical force directly to separate intact substrates, the invention inverts the approach by first cooling the stack to embrittle the interconnect layer. This inversion reduces the mechanical force needed for detachment from high levels (which would damage the wafer) to minimal levels (which preserve wafer integrity).
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables careful and prompt detachment of substrates with reduced energy consumption, minimizing stress on the product wafer and preventing unwanted diffusion of doping elements, while increasing debonding rate and economic efficiency.
Implementation Method 1
A method and system for detaching substrates by cooling and embrittling the interconnect layer, allowing for separation with reduced mechanical force and minimizing energy consumption, using a cooling agent to lower the temperature of the substrate stack
Implementation Method 2
which layer embrittles at low temperatures, especially below room temperature. Here in particular the mechanical stability and/or the adhesion action of the interconnect layer are reduced
Data Source
AI summary
A method and device for detaching a first substrate, which is connected to a second substrate by an interconnect layer, from the second substrate by embrittlement of the interconnect layer. A method for bonding of a first substrate to a second substrate with an interconnect layer which can be embrittled by cooling. A use of a material which can be embrittled for producing an interconnect layer between first and second substrates for forming a substrate stack. A substrate stack, formed from a first substrate, a second substrate and an interconnect layer located therebetween, the interconnect layer formed from a material which can be embrittled. A wafer chuck for holding a first substrate when the first substrate is being detached from a second substrate with fixing means which can be activated by lowering the temperature.