Semiconductor Substrate Doping for Uniform Porous Layer Peeling
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Solution Overview
Problem
The existing methods for forming a porous layer on a support substrate for semiconductor devices via anodization result in non-uniform thickness across the substrate plane, affecting the uniformity and efficiency of the semiconductor manufacturing process.
Innovation Solution
Implanting a dopant into the semiconductor substrate to reduce its resistance value, followed by anodization treatment to form a porous layer with controlled thickness and uniformity, allowing for precise control of porosity and formation speed.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If anodization treatment is applied to form a porous layer on the support substrate, then the porous layer can be formed for subsequent peeling and reuse of the substrate, but the thickness of the porous layer becomes non-uniform across the plane of the substrate
Solution Approach 1:
The patent applies a preliminary dopant implantation step before anodization to modify the electrical properties of the substrate. By pre-doping the substrate with phosphorus or arsenic at controlled doses (1×10^15 to 1×10^16 atoms/cm²), the electrical conductivity is enhanced uniformly across the substrate surface, which ensures uniform electric field distribution during subsequent anodization, thereby achieving uniform porous layer thickness while maintaining peelability
Solution Approach 2:
The patent changes the electrical parameter (resistivity) of the substrate by controlling dopant concentration and distribution. By adjusting the dopant type (phosphorus or arsenic), implantation dose, and energy, the substrate's electrical properties are optimized to enable uniform porous layer formation through anodization. The resistivity is controlled within specific ranges (0.1-10 Ωcm) to achieve both uniformity and peelability
2Productivity
If the porous layer thickness is increased to improve peeling efficiency, then the substrate can be peeled more effectively, but the non-uniformity in thickness increases across the substrate plane
Solution Approach 1:
The patent establishes a feedback mechanism where the dopant implantation parameters are optimized based on the desired porous layer thickness and uniformity requirements. By controlling the dopant dose and energy to achieve specific resistivity ranges, the process self-regulates to produce uniform porous layers at the desired thickness, enabling both high peeling efficiency and thickness uniformity without trade-off
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach ensures a porous layer with uniform thickness and porosity, enhancing the semiconductor device manufacturing process by improving the uniformity and reducing manufacturing costs through the reuse of support substrates.
Implementation Method 1
Implanting a dopant into the semiconductor substrate to reduce its resistance value
Implementation Method 2
anodization treatment to form a porous layer with controlled thickness and uniformity
Data Source
AI summary
According to one embodiment, a method for manufacturing a semiconductor device includes forming, on a substrate, an active layer in which a dopant is implanted; forming a porous layer by making the active layer porous by an anodization treatment; forming a device layer including at least a part of a configuration of the semiconductor device above the porous layer; and cleaving the porous layer to remove the substrate.