Substrate Drying Chamber Clamping for Supercritical CO2 Processing
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Solution Overview
Problem
The rotary drying process for substrates in semiconductor manufacturing risks damaging patterns and fails to adequately remove cleaning fluids from high-aspect-ratio features due to substrate rotation, while supercritical drying can be inefficient due to particle generation and substrate distortion from chamber collisions during high-pressure gas supply.
Innovation Solution
A substrate processing apparatus with a chamber system that includes a moving unit and clamping body, controlled by a controller to maintain close contact and minimize particle generation and substrate misplacement, using a buffer and magnetic levitation for precise movement to prevent collisions and maintain substrate position during supercritical fluid processing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of operation
If a gap is maintained between the clamping body and chamber for frictionless movement, then the clamping body can move smoothly, but the chamber can shift position when treatment fluid is supplied, causing substrate distortion
Solution Approach 1:
The chamber is moved into close contact with the clamping body before treatment fluid is supplied. This preliminary action prevents the chamber from shifting when high-pressure fluid enters, thereby preventing substrate distortion while maintaining smooth clamping body movement during positioning
Solution Approach 2:
A buffer is installed between the chamber and clamping body to provide beforehand cushioning. The buffer allows the chamber to be in close contact during fluid treatment to prevent substrate distortion, while still permitting frictionless movement during positioning operations
2Productivity
If high pressure drying gas is supplied to achieve supercritical drying, then cleaning fluid removal is effective, but chamber collision with clamping body generates particles and distorts substrate position
Solution Approach 1:
The chamber is positioned in close contact with the clamping body before high-pressure drying gas is supplied. This preliminary positioning prevents chamber collision and particle generation during the supercritical drying process, while maintaining effective cleaning fluid removal
Solution Approach 2:
A buffer is introduced as an intermediary element between the chamber and clamping body. The buffer maintains close contact during high-pressure treatment to prevent particle generation, while allowing controlled movement during positioning
3Productivity
If rotary drying is used to remove cleaning solution, then drying is achieved, but patterns may be damaged and cleaning fluid in high-aspect-ratio features is not adequately removed
Solution Approach 1:
The patent changes the drying parameter from mechanical rotation to supercritical fluid treatment. By using carbon dioxide in a supercritical state, the cleaning fluid is removed through dissolution and phase change rather than centrifugal force, preserving pattern integrity while achieving effective drying
Solution Approach 2:
The patent utilizes phase transitions of carbon dioxide (gas to supercritical fluid to liquid to gas) to achieve drying. The supercritical CO2 dissolves the cleaning fluid, then transitions to liquid to extract it, and finally returns to gas to leave no residual solvent, thereby preserving patterns while achieving thorough drying
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The apparatus efficiently processes substrates with minimized particle generation and substrate distortion, ensuring effective removal of cleaning fluids without damaging patterns, even during high-pressure supercritical fluid treatment.
Implementation Method 1
a buffer between the chamber and the clamping body, the buffer to absorb shock and vibration
Implementation Method 2
magnetic levitation for precise movement to prevent collisions
Implementation Method 3
The drying gas in the supercritical state has high solubility and permeability. When supercritical drying gas is supplied to the substrate, the drying gas easily penetrates into the patterns on the substrate, and the organic solvent remaining on the substrate is also easily dissolved in the drying gas
Implementation Method 4
Both the temperature and the pressure of the drying gas rise to the critical point or above, and the drying gas undergoes a phase change to the supercritical state
Data Source
AI summary
Disclosed is a manufacturing method of a semiconductor device. The manufacturing method may include: a closing operation of seating a substrate on a support member provided in a chamber, and closing the chamber to seal a treating space provided by the chamber; a clamping operation of clamping the chamber by moving a clamping body in a direction facing the chamber after the closing operation; a close-contact operation of making the chamber be in contact with the clamping body after the clamping operation; and a substrate processing operation of drying the substrate by supplying supercritical fluid into the treating space.