Substrate Drying Chamber Flow Layout to Prevent Pattern Leaning
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Solution Overview
Problem
Existing semiconductor device manufacturing methods using supercritical drying processes risk damaging substrate patterns during the drying process, particularly for line widths of 30 nm or less.
Innovation Solution
A substrate drying apparatus and method that utilizes a drying chamber with a lower and upper chamber, incorporating a main and sub-supply port system for supercritical fluid introduction, along with a buffer member to control fluid flow and pressure measurement, ensuring pattern integrity during drying.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a supercritical drying process is used to dry substrates efficiently, then drying efficiency is improved, but pattern damage (leaning) may occur
Solution Approach 1:
The supply port is divided into multiple ports (first supply port, second supply port, third supply port) positioned at different locations and orientations. This segmentation allows the supercritical fluid to be supplied from multiple directions simultaneously, distributing the fluid flow stress and preventing concentrated forces that could cause pattern leaning, thereby maintaining pattern integrity while achieving efficient drying.
Solution Approach 2:
Different supply ports are designed with different orientations and positions to address local flow requirements. The first supply port supplies fluid vertically downward, the second supply port supplies fluid horizontally, and the third supply port supplies fluid at an angle. This local quality differentiation ensures uniform fluid distribution across the substrate surface, preventing localized high-stress zones that could damage patterns.
2Manufacturing precision
If multiple supply ports are used to prevent pattern damage, then device complexity increases
Solution Approach 1:
The multiple supply ports serve universal functions of introducing supercritical fluid to the drying chamber from different directions. Rather than requiring separate complex systems for each supply direction, the invention integrates multiple ports into a single cohesive structure that performs the same basic function (fluid supply) but with different orientations, simplifying the overall system while achieving the desired pattern protection.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Efficient drying of substrates without causing pattern leaning or damage, utilizing supercritical fluids like CO2, maintaining pattern integrity and environmental sustainability through reuse and low environmental impact.
Implementation Method 1
a supercritical drying process for semiconductor devices having line width(s) of 30 nm or less has been proposed in which a substrate may be dried by exposure to a supercritical fluid
Implementation Method 2
Supercritical fluids exhibit excellent diffusion and penetrating properties
Implementation Method 3
measuring pressure of the supercritical fluid in the drying chamber using a pressure meter to determine a measured pressure value
Data Source
AI summary
A substrate drying apparatus includes; a drying chamber configured to load a substrate and including a lower chamber and an upper chamber above the lower chamber, a supply port configured to supply a supercritical fluid into the drying chamber and including a main supply port and a sub-supply port horizontally spaced apart from the main supply port, wherein the main supply port penetrates a center portion of the upper chamber, and a first buffer member coupled to the upper chamber, vertically separated from the sub-supply port, and vertically overlapping the sub-supply port, such that supercritical fluid vertically introduced into the drying chamber through the sub-supply port is impeded by the first buffer member to change a flow direction for the supercritical fluid.