Substrate Edge Etching With Purge Gas for Precise Width Control
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Solution Overview
Problem
Conventional substrate edge etching methods, such as wet and dry etching, face inefficiencies in controlling the etched width and time, leading to incomplete removal of foreign substances and potential damage to the circuit pattern due to inappropriate etching widths or extended etching times.
Innovation Solution
A substrate edge etching apparatus with a horizontally rotatable chuck base, purge gas supply, and chemical liquid control system, allowing precise adjustment of etched amounts by controlling rotational speed, purge gas flow rate, chemical liquid flow rate, and bowl height to maintain a consistent etched width.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a wide peripheral edge of the substrate is etched to remove foreign substances, then the removal of foreign substances is improved, but the real area on which a circuit pattern is formed becomes small inefficiently
Solution Approach 1:
The invention applies different treatments to different regions of the substrate edge. By controlling the chemical liquid application to specifically target the peripheral edge region where foreign substances exist, the etching is localized precisely where needed. This ensures thorough removal of foreign substances from the edge while leaving the central circuit pattern area unaffected, thus resolving the contradiction between effective foreign substance removal and maintaining productive substrate area.
2Productivity
If a narrow peripheral edge of the substrate is etched to maintain large effective area, then the effective area for circuit pattern is improved, but the layers of foreign substances are partially broken when the peripheral edge is fixed by chuck pins
Solution Approach 1:
The invention performs preliminary etching of the peripheral edge before the substrate is fixed by chuck pins for subsequent processing. By removing foreign substances in advance while the substrate is still held in a state that allows uniform edge access, the need for later wide etching is eliminated. This preliminary action ensures complete foreign substance removal without requiring excessive etching width that would compromise the effective circuit pattern area.
3Reliability
If conventional wet etching with mask protection is used, then the circuit pattern is protected from etching, but the etching time is extended and the configuration becomes complicated
Solution Approach 1:
The invention extracts and removes the mask step from the etching process entirely. By applying chemical liquid in a controlled manner that inherently targets only the peripheral edge region through precise delivery mechanisms, the method achieves selective etching without requiring mask layers. This elimination of the mask application and removal steps significantly reduces etching time and simplifies the overall process configuration while still protecting the central circuit pattern area from etching.
4Manufacturing precision
If mask diameter is frequently changed to adjust etched width, then the etching precision is improved, but the operation becomes inconvenient and etching time increases
Solution Approach 1:
The invention changes from discrete mask diameter selection to continuous parameter control of chemical liquid application. By adjusting parameters such as chemical liquid flow rate, application position, and substrate rotation speed, the etched width can be precisely controlled without physical mask changes. This parametric control approach maintains manufacturing precision for etched width while dramatically improving operational convenience and reducing setup time between different etching specifications.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables efficient and controlled etching of substrate edges with minimal invasion of chemical liquid into the circuit pattern, reducing etching time and preventing damage to the substrate, while maintaining a uniform etched width.
Implementation Method 1
a purge gas supply assembly for supplying a purge gas to the purge gas inlet hole
Implementation Method 2
a chemical liquid supply unit for supplying a chemical liquid to top of the substrate
Implementation Method 3
a substrate support assembly having a horizontally rotatable chuck base
Data Source
AI summary
The present invention relates to a substrate edge etching apparatus including: a substrate support assembly having a horizontally rotatable chuck base, chuck pins disposed on top of the chuck base to support a substrate, a purge gas inlet hole extending from an underside center of the chuck base to an interior of the chuck base in an upward and downward direction thereof, and a purge gas outlet hole extending radially from the purge gas inlet hole and then extending upwardly to penetrate top of the chuck base; a purge gas supply assembly for supplying a purge gas to the purge gas inlet hole; a chemical liquid supply unit for supplying a chemical liquid to top of the substrate; a bowl assembly having bowls surrounding the periphery of the substrate support assembly and configured to be able to ascend and descend; and a fan filter unit spaced apart from top of the substrate support assembly.