Substrate Edge Etching with In-Process Rinsing for Residue Removal
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing substrate processing methods face challenges in effectively removing etching residues from metal polycrystalline films during the etching process, as these residues can dry and solidify at the gas-liquid interface, making them difficult to remove even with subsequent rinse liquids.
Innovation Solution
A substrate processing method involving the sequential supply of an etching liquid and a rinse liquid to the peripheral portion of a substrate, where the rinse liquid is applied closer to the center than the etching liquid, and the substrate is rotated to ensure effective washing away of residues before they dry, followed by drying the substrate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If etching liquid is supplied to the peripheral portion of the substrate to remove metal polycrystalline film, then the metal polycrystalline film is etched effectively, but etching residues dry and solidify at the gas-liquid interface making them difficult to remove
Solution Approach 1:
The rinse liquid is supplied to the substrate before the etching process is completely finished, performing the washing action in advance while the etching is still ongoing. This preliminary washing prevents residues from drying and solidifying at the gas-liquid interface, making them easier to remove before they become problematic
Solution Approach 2:
The etching and rinsing processes are made continuous by supplying both etching liquid and rinse liquid simultaneously to different regions of the substrate. The rinse liquid continuously washes away residues during the etching process, preventing their solidification and maintaining the effectiveness of the etching operation throughout
2Productivity
If rinse liquid is supplied after etching is completed, then etching process is finished, but etching residues have already dried and solidified making washing ineffective
Solution Approach 1:
The rinse liquid is supplied during the etching process rather than after completion, performing the washing action in advance while residues are still wet and removable. This timing prevents the solidification problem that would make subsequent washing ineffective
Solution Approach 2:
The processing is divided into periodic stages where etching and rinsing are alternately applied to different regions of the substrate. By controlling the supply timing and positions, the system ensures that each region receives rinsing at the optimal moment before residues can solidify, maintaining high removal effectiveness throughout the periodic cycle
3Device complexity
If etching liquid and rinse liquid are supplied to the same position, then processing is simplified, but rinse liquid cannot effectively wash away residues at the gas-liquid interface
Solution Approach 1:
The substrate surface is segmented into different functional regions: an etching region where etching liquid is supplied to remove metal polycrystalline film, and a rinsing region where rinse liquid is supplied to wash away residues. This spatial segmentation allows each liquid to perform its function optimally without interfering with the other
Solution Approach 2:
Different regions of the substrate are given different local qualities by supplying different liquids to different positions. The peripheral portion receives etching liquid for film removal, while the central portion receives rinse liquid for washing. This local differentiation ensures that residues are washed away at the gas-liquid interface where they form, maintaining manufacturing precision
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables the effective removal of etching residues by preventing their solidification and ensuring they are washed away during the etching process, thereby improving the efficiency and completeness of substrate processing.
Implementation Method 1
while rotating the substrate having the metal polycrystalline film formed on a front surface
Implementation Method 2
partially etching a metal polycrystalline film at a peripheral portion of a substrate in a thickness direction by supplying an etching liquid
Implementation Method 3
washing away an etching residue generated in the partially etching of the metal polycrystalline film with a rinse liquid by supplying the rinse liquid
Data Source
AI summary
A substrate processing method includes a first process of supplying an etching liquid to a peripheral portion of a substrate while rotating the substrate having a metal polycrystalline film formed on a front surface thereof; a second process of supplying a rinse liquid to a portion of the substrate closer to a center side of the substrate than a supply position of the etching liquid in the first process while rotating the substrate; a third process of supplying the etching liquid to the peripheral portion of the substrate while rotating the substrate; a fourth process of supplying the rinse liquid to a portion of the substrate closer to the center side of the substrate than a supply position of the etching liquid in the third process while rotating the substrate; and a fifth process of drying the substrate after the fourth process.