Substrate Edge Heating Steam Injection for Etch Control
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Solution Overview
Problem
Existing substrate processing devices face challenges in reducing the etching width at the peripheral edge of substrates while maintaining high etching efficiency, as the temperature reduction due to rotation leads to decreased chemical activity and increased processing time and liquid consumption.
Innovation Solution
A substrate processing device that includes a heating mechanism to maintain the temperature of the peripheral edge by injecting steam and a gas flow to prevent mist adherence, allowing for efficient chemical treatment with reduced processing liquid and time, while controlling the etching width.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the substrate is rotated at high speed to reduce processing time, then productivity is improved, but temperature reduction at the peripheral edge causes decreased chemical activity and increased processing liquid consumption
Solution Approach 1:
The patent applies parameter changes by controlling the rotation speed of the substrate to optimize the balance between productivity and temperature maintenance. By adjusting the rotation speed parameter, the system achieves sufficient chemical activity while preventing excessive temperature reduction at the peripheral edge, thereby reducing processing liquid consumption without sacrificing productivity.
2Productivity
If the amount of processing liquid is increased to maintain chemical activity at the peripheral edge, then etching efficiency is improved, but processing liquid consumption increases
Solution Approach 1:
The patent applies local quality by creating a temperature gradient control strategy that maintains appropriate temperature specifically at the peripheral edge region. This localized temperature management ensures sufficient chemical activity and etching efficiency at the peripheral edge without requiring excessive processing liquid throughout the entire substrate, thereby reducing overall processing liquid consumption.
3Manufacturing precision
If the processing time is extended to achieve uniform etching width, then manufacturing precision is improved, but productivity decreases
Solution Approach 1:
The patent applies dynamics by implementing a dynamic rotation speed control mechanism that adapts the substrate rotation speed during the etching process. This dynamic adjustment allows the system to maintain uniform etching width across different regions of the substrate while optimizing the overall processing time, achieving both manufacturing precision and productivity goals.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The device effectively suppresses temperature reduction at the peripheral edge, maintaining chemical activity and reducing processing time and liquid consumption, thereby enhancing etching efficiency and uniformity.
Implementation Method 1
a heating portion for injecting heating steam to a peripheral edge part of the substrate to heat the peripheral edge part
Implementation Method 2
a gas injecting portion for injecting a gas from above the substrate toward a predetermined injection target region defined within a range surrounded by a rotating track of the peripheral edge part of the substrate in an upper surface of the substrate, to generate, on the substrate, a gas flow which flows from the injection target region toward the peripheral edge part of the substrate
Data Source
AI summary
It is an object to carry out a chemical treatment for a peripheral edge part of a substrate while suppressing an amount of consumption of a processing liquid and a time required for processing. In order to achieve the object, a substrate processing device injects heating steam to a peripheral edge part of a substrate to heat the peripheral edge part when carrying out a chemical treatment for the peripheral edge part of the substrate while rotating the substrate in a substantially horizontal posture. Moreover, the substrate processing device injects a gas from above the substrate toward a predetermined injection target region defined within a range surrounded by a rotating track of the peripheral edge part of the substrate in an upper surface of the substrate, thereby generating, on the substrate, a gas flow which flows from the injection target region toward the peripheral edge part of the substrate.