Substrate Edge Infrared Temperature Measurement Below 400°C
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Solution Overview
Problem
Existing methods for measuring substrate temperatures in semiconductor manufacturing, particularly at low temperatures below 400°C, are inaccurate due to the transparency of substrates to infrared wavelengths and the limitations of physical contact methods like thermocouples.
Innovation Solution
The use of infrared cameras to measure the temperature of a substrate's edge surface, rather than its top surface, which allows for non-contact, accurate temperature profiling across all types of substrates, including blank substrates, and enables measurements below 400°C.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If thermocouples are used to measure substrate temperature by physical contact, then temperature measurement is possible, but measurement precision deteriorates due to contamination concerns and unreliable thermal physical contact
Solution Approach 1:
The patent replaces the mechanical contact system (thermocouple physically touching the substrate) with a non-contact optical system (infrared camera). The infrared camera measures substrate temperature by detecting infrared radiation emitted from the substrate surface, eliminating the need for physical contact and associated contamination and reliability issues.
2Measurement precision
If thermocouples are placed at predetermined locations on substrate surface, then temperature measurement is possible, but measurement precision deteriorates due to large distances between measurement locations on larger diameter substrates
Solution Approach 1:
The infrared camera captures a two-dimensional image of the substrate surface, allowing temperature measurement across the entire substrate area simultaneously. This eliminates the need for multiple discrete thermocouple placements and provides comprehensive temperature variation data across the substrate surface in a single measurement.
3Measurement precision
If infrared camera views top surface of blank substrate, then non-contact measurement is possible, but measurement precision deteriorates because substrate is transparent to infrared wavelengths at temperatures under 400°C
Solution Approach 1:
The patent changes the measurement dimension from viewing the top surface (where transparency causes problems) to viewing the edge surface (where the substrate is opaque). By measuring the edge surface, the infrared camera can detect infrared radiation without the substrate material interfering, enabling accurate low temperature measurements.
4Measurement precision
If scanning monochrometer with filters is used to measure reflected infrared energy, then temperature measurement is possible, but device complexity increases and measurement speed decreases
Solution Approach 1:
The patent extracts the temperature measurement function from the complex scanning monochrometer system and implements it using a simpler infrared camera. The infrared camera directly captures infrared radiation from the substrate edge surface, eliminating the need for mechanical filter rotation and complex wavelength scanning while maintaining measurement capability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method provides a reliable and accurate means of measuring substrate temperatures, improving process control in semiconductor manufacturing by ensuring precise temperature measurements across various substrate types and temperatures.
Implementation Method 1
measuring the infrared (IR) energy emitted from the surface of a heated substrate
Implementation Method 2
measuring the infrared (IR) energy emitted from the surface of a heated substrate, then converting this measured energy into a temperature reading
Data Source
AI summary
A method and apparatus for measuring a temperature of a substrate located in a semiconductor processing environment is disclosed. The substrate has a top surface and an edge surface, and is positioned in a prescribed location within the semiconductor processing environment. An infrared camera oriented to view one side of the edge surface of the substrate is triggered to obtain an infrared image of the one side of the edge surface of the substrate. The infrared image is processed to obtain a temperature profile of the substrate.


