3D Substrate-Embedded IPD Structure for PCB Space Constraints
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Solution Overview
Problem
The increasing miniaturization of semiconductor devices and packaging structures has reduced the available surface area on printed circuit boards (PCBs) for mounting integrated passive devices (IPDs) such as capacitors, making it difficult to accommodate these components effectively.
Innovation Solution
The implementation of three-dimensional device structures that embed deep trench capacitors (DTCs) within dielectric layers of semiconductor dies, allowing for the relocation of IPDs from surface-mounted areas to within the dielectric layers, thereby freeing up surface space for other components.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If surface area on PCB is reduced due to device miniaturization, then integration density improves, but ability to mount IPDs deteriorates
Solution Approach 1:
The patent embeds IPDs within the dielectric layers of the semiconductor substrate, transitioning from two-dimensional surface mounting to three-dimensional internal integration. This allows IPDs to be positioned in the vertical dimension within the substrate layers, freeing up surface area while maintaining component functionality and electrical connectivity.
Solution Approach 2:
The patent integrates IPDs nested within the multi-layer dielectric structure of the semiconductor substrate. The IPDs are embedded inside the substrate's internal layers, similar to nested dolls, allowing compact integration without occupying additional surface area and enabling higher integration density.
2Area of stationary object
If IPDs are embedded within dielectric layers, then space utilization efficiency improves, but device complexity increases
Solution Approach 1:
The patent forms the IPDs and embeds them within the dielectric layers during the early stages of substrate fabrication, before final assembly. This preliminary integration simplifies the overall process by combining multiple steps (IPD formation, embedding, and connection) into the existing fabrication sequence, reducing later complexity despite the sophisticated embedding requirement.
Data Source
AI summary
A three-dimensional device structure includes a die including a semiconductor substrate, an interconnect structure disposed on the semiconductor substrate, a through silicon via (TSV) structure that extends through the semiconductor substrate and electrically contacts a metal feature of the interconnect structure, and an integrated passive device (IPD) embedded in the semiconductor substrate and electrically connected to the TSV structure.