Substrate Etching Gas Sequence for Lower Film Impurity
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing substrate processing methods struggle to reduce the amount of impurities in films after etching, which can deteriorate the electrical characteristics of semiconductor devices.
Innovation Solution
A technique involving multiple cycles of supplying a first fluorine-containing gas and a reactive gas to the substrate, followed by a second fluorine-containing gas under specific conditions to convert the generated substance into a form with lower vapor pressure, thereby reducing impurity content.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a film is etched by performing a cycle of supplying different types of gases, then the film removal is achieved, but the amount of impurities in the film increases
Solution Approach 1:
The etching process is divided into multiple cycles, each consisting of a first gas supply step and a second gas supply step. This segmentation allows the process to achieve both film removal and impurity reduction through repeated alternating actions of different gas types.
Solution Approach 2:
The patent changes the parameters of the gas supply process by using different gas types (first gas and second gas) in alternating steps. The second gas is specifically selected to have lower reactivity, which changes the chemical reaction parameters to reduce impurity incorporation while maintaining etching effectiveness.
2Object-generated harmful factors
If multiple cycles of gas supply are performed to reduce impurities, then the impurity content decreases, but the processing time increases
Solution Approach 1:
The patent performs multiple cycles of gas supply, which is an excessive action beyond a single etching step. However, by optimizing the number of cycles and the duration of each step, the process achieves sufficient impurity reduction without excessive time consumption, balancing quality improvement with productivity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method effectively reduces the amount of impurities in the film post-etching, thereby improving the electrical characteristics and quality of semiconductor devices.
Implementation Method 1
supplying a first fluorine-containing gas to the substrate; and supplying a reactive gas containing a predetermined element to the substrate; wherein a first substance containing the predetermined element is generated
Implementation Method 2
supplying a second fluorine-containing gas to the substrate after (a), wherein the second fluorine-containing gas is supplied in (b) under conditions in which the first substance is converted into a substance whose vapor pressure is lower than that of the first substance
Implementation Method 3
removing at least a part of a film formed on a substrate by performing a cycle two or more times
Data Source
Figure 1
Figure 2
Figure 3
AI summary
According to the present disclosure, it is possible to reduce an amount of impurities contained in a film after the film is etched. There is provided a technique that includes: (a) removing at least a part of a film formed on a substrate by performing a cycle two or more times, wherein the cycle includes: (a1) supplying a first fluorine-containing gas to the substrate; and (a2) supplying a reactive gas containing a predetermined element to the substrate; and (b) supplying a second fluorine-containing gas to the substrate after (a), wherein a first substance containing the predetermined element is generated in (a), and wherein the second fluorine-containing gas is supplied in (b) under conditions in which the first substance is converted into a substance whose vapor pressure is lower than that of the first substance.