Substrate Etching Cycles for Residual Halogen Removal
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Solution Overview
Problem
The etching process in semiconductor device manufacturing often leaves halogen elements in the film, leading to deteriorated device characteristics.
Innovation Solution
A substrate processing method involving multiple cycles of supplying different halogen element-containing gases and a modification gas to effectively remove residual halogen elements, including a first cycle with first and second halogen element-containing gases, and a second cycle with a modification gas and a third halogen element-containing gas, to improve film etching and device characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a conventional etching process using boron-containing gas and halide gas is performed, then film etching is achieved, but halogen elements remain in the film causing device characteristic deterioration
Solution Approach 1:
The etching process is divided into multiple sequential cycles, each consisting of: (a) supplying boron-containing gas to form boron compounds, (b) supplying first halide gas to etch the film, (c) supplying oxygen-containing gas to oxidize and remove halogen elements, and (d) supplying inert gas to purge the chamber. This segmented multi-step cycle repeatedly performs etching followed by halogen removal, effectively eliminating halogen contamination while maintaining etching quality.
Solution Approach 2:
The multi-cycle process continuously alternates between etching operations and halogen removal operations. By performing multiple cycles of gas supply sequences without interrupting the overall process, the system maintains continuous useful action that progressively removes halogen elements while completing the etching, ensuring both high etching quality and low contamination.
2Reliability
If multiple gas supply steps are performed to remove halogen elements, then device characteristics improve, but processing time increases
Solution Approach 1:
The process merges multiple functions into integrated gas supply sequences: the oxygen-containing gas step simultaneously oxidizes halogen elements for removal while preparing the surface for the next etching cycle, and the inert gas purge serves both to remove reaction byproducts and prepare for the next gas supply. This merging of functions reduces the number of separate steps needed, shortening processing time while maintaining effective halogen removal and device characteristics.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enhances device characteristics by removing residual halogen elements, ensuring good step coverage on high-aspect-ratio structures and shortening processing time, thereby improving throughput.
Implementation Method 1
by performing a step of supplying a boron-containing gas and a step of supplying a halide gas a predetermined number of times, it is possible to etch the film
Implementation Method 2
supplying a halide gas... it is possible to etch the film
Implementation Method 3
supplying oxygen-containing gas... residual halogen elements in the film can be removed
Data Source
AI summary
According to the present disclosure, there is provided a technique capable of improving device characteristics. According to some embodiments of the present disclosure, there is provided a technique that includes: (A) processing a substrate by performing a first cycle a first predetermined number of times, wherein the first cycle includes: (a) supplying a first halogen element-containing gas to the substrate; and (b) supplying a second halogen element-containing gas to the substrate; and (B) processing the substrate by performing a second cycle a second predetermined number of times, wherein the second cycle includes: (c) supplying a modification gas to the substrate; and (d) supplying a third halogen element-containing gas to the substrate.