Substrate Etching with Iodide Ion Control for Narrow Recesses
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Solution Overview
Problem
Existing substrate treating methods face challenges in etching substrates with narrow recesses, as the etching quality decreases due to the size of the recesses, leading to inappropriate etching and reduced etching function.
Innovation Solution
A substrate treating method and apparatus that utilize iodide ions (I−) as an etchant, which have hydrophobicity and affinity for the substrate projections, allowing them to easily enter recesses regardless of size, along with hydrogen ions (H+) to promote effective etching, while an adjusting step suppresses the decrease in iodide ions to maintain etching efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional etching methods are used on substrates with narrow recesses, then the etching process can be performed, but the etching quality decreases due to the size of the recesses
Solution Approach 1:
The patent changes the chemical parameters of the etching solution by adding iodide ions (I-) to form an etchant with enhanced properties. This chemical parameter change enables the etchant to effectively penetrate narrow recesses and maintain etching quality even when recess width is reduced to several tens of nanometers or less.
Solution Approach 2:
The patent introduces iodide ions (I-) as an intermediary substance that facilitates etching in narrow recesses. These ions act as a mediator that enhances the etching solution's ability to penetrate and etch substructures with very narrow recesses, improving etching quality without requiring changes to the recess dimensions.
2Productivity
If the recess width is reduced to increase pattern density, then finer patterns can be formed, but the etching function decreases due to inadequate etchant penetration
Solution Approach 1:
The patent modifies the chemical composition parameters of the etching solution by incorporating iodide ions, which fundamentally changes the etching mechanism. This parameter change enables effective etching in ultra-narrow recesses (several tens of nm), allowing higher pattern density while maintaining reliable etching function.
Solution Approach 2:
The patent creates a composite etching system by combining conventional etching agents with iodide ions. This composite approach leverages the synergistic effects of different chemical components to achieve both high pattern density and reliable etching function in narrow recesses that would be inaccessible to conventional etchants alone.
3Manufacturing precision
If iodide ions are added to enhance etching capability in narrow recesses, then etching quality improves, but iodide ions may decrease over time reducing etching efficiency
Solution Approach 1:
The patent applies preliminary action by adding an iodide ion supply substance to the etching solution before the etching process begins. This substance continuously releases iodide ions during etching, ensuring adequate ion concentration is maintained throughout the process. This preliminary preparation prevents iodide ion depletion and maintains consistent etching quality.
Solution Approach 2:
The patent implements self-service by incorporating a substance that automatically supplies iodide ions to the etching solution during the etching process. This self-regulating mechanism ensures the etchant maintains its effectiveness without requiring external intervention to replenish iodide ions, thereby maintaining etching quality throughout the entire process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method ensures suitable etching of substrates regardless of recess size, maintaining etching quality by ensuring sufficient iodide and hydrogen ion presence, even in narrow recesses, thus overcoming the limitations of traditional etching techniques.
Implementation Method 1
Iodide ions (I−) have hydrophobicity. The projection on the substrate also has hydrophobicity. Accordingly, an affinity between the iodide ions (I−) and the projection is better than an affinity between a water molecule and the projection.
Data Source
AI summary
This disclosure relates to a substrate treating method and a substrate treating apparatus. An additive is dissolved in a first treatment liquid. The first treatment liquid contains iodide ions (I−). The substrate treating method includes an adjusting step and a supplying step. In the adjusting step, decrease in iodide ions (I−) contained in the first treatment liquid is suppressed. Accordingly, the first treatment liquid contains a sufficient amount of iodide ions (I−). In the supplying step, the first treatment liquid adjusted in the adjusting step is supplied to a substrate. Moreover, in the supplying step, a first etchant for etching the substrate is supplied to the substrate.