Substrate Etching with Sacrificial Mask Film for Shape Accuracy
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing substrate etching processes face challenges in maintaining etching processing accuracy, particularly in preventing changes in mask shape and residual film formation, which complicates fine etching procedures.
Innovation Solution
A method involving a three-step process where a first film with an electrode material is formed on a mask, a second film of the etching layer material is deposited on this first film, and both films are removed using plasma of a processing gas containing oxygen, effectively delaminating the first film from the mask while maintaining the mask residual film and suppressing changes in mask shape.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a mask is used for plasma etching on a laminated body, then etching can be performed on each layer, but the etching layer material may form on the mask surface causing changes in mask shape and complicating fine etching procedures
Solution Approach 1:
A first film is formed on the mask surface before the etching process. This preliminary film acts as a barrier to prevent etching layer material from adhering to the mask, thereby maintaining mask shape accuracy and simplifying subsequent fine etching procedures while improving overall etching processing precision
Solution Approach 2:
The first film serves as an intermediary layer between the mask and the etching layer. This intermediate film prevents direct contact between the etching layer material and the mask surface, eliminating the harmful effect of material deposition on the mask while enabling precise etching to proceed
2Ease of manufacture
If oxygen plasma is used to remove films, then the first film and second film can be effectively removed, but process control must be precisely managed
Solution Approach 1:
Oxygen plasma parameters are optimized to achieve selective removal of the first and second films while preserving the mask structure. By controlling plasma power, gas flow rate, and exposure time, the process efficiently removes deposited films without compromising manufacturing precision or requiring excessive process control complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances etching processing accuracy by preventing the etching layer material from forming on the mask surface, thus simplifying the etching process and maintaining precise mask shape and residual film integrity.
Implementation Method 1
exposing the substrate after the second step to plasma of a processing gas
Implementation Method 2
The processing gas includes oxygen
Data Source
AI summary
A method of processing a substrate includes a first step, a second step and a third step. The substrate includes an etching layer and a mask. The mask is formed on a first surface of the etching layer. The first step forms a first film on a second surface of the mask. The second step forms a second film having a material of the etching layer on the first film by etching the first surface of the etching layer. The third step removes the first film and the second film by exposing the substrate after the second step to plasma of a processing gas. The first film has an electrode material. The processing gas includes oxygen.