Substrate Etching Cycles Using In Situ Mediator Formation
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Solution Overview
Problem
Existing semiconductor manufacturing processes face challenges in achieving stable and controllable etching due to the combination of etching agents and films, leading to inconsistent results.
Innovation Solution
A method involving a cycle of forming a first layer on a substrate using processing agents and then etching it with an etching agent, where a substance X reacts with the etching agent to enhance etching, allowing for the controlled removal of both the layer and the underlying film.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional etching agents are used directly on the first film, then the etching process is simple, but the etching stability and controllability are poor
Solution Approach 1:
The patent applies preliminary action by forming a first layer on the surface of the first film before etching. This first layer is specifically designed to react with the etching agent to generate substance X, which then promotes the etching of the first film. This preparatory step ensures that the etching process proceeds with high stability and controllability, directly resolving the contradiction between etching reliability and process complexity.
Solution Approach 2:
The patent introduces substance X as an intermediary that mediates between the etching agent and the first film. Substance X is generated through the reaction between the etching agent and the first layer, and it specifically promotes the etching of the first film. This intermediary mechanism enables precise control over the etching process, improving etching stability while maintaining a manageable process complexity.
2Manufacturing precision
If a first layer is formed and etched in cycles, then etching promotion and uniformity are improved, but the processing time increases
Solution Approach 1:
The patent employs periodic action by performing the etching process in cycles, where each cycle includes forming a first layer and then etching it. This periodic formation and removal of the first layer ensures uniform etching across the substrate by continuously generating substance X at controlled intervals. The cyclic approach improves etching uniformity while allowing optimization of cycle parameters to manage processing time.
Solution Approach 2:
The patent utilizes parameter changes by adjusting various process parameters such as the thickness of the first layer, the composition of processing agents, temperature, and pressure to optimize the balance between etching uniformity and processing time. By carefully controlling these parameters, the patent achieves high etching precision while minimizing the time penalty associated with cyclic processing.
3Productivity
If substance X is generated to react with etching agent, then etching capability is enhanced, but the process complexity increases
Solution Approach 1:
The patent applies self-service by designing the first layer to automatically generate substance X when exposed to the etching agent. The first layer contains precursors that react with the etching agent to produce substance X in situ, which then promotes further etching. This self-generating mechanism enhances etching efficiency without requiring external introduction of substance X, thereby limiting the increase in process complexity to only the formation of the first layer.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables stable and controllable etching of films with low reactivity or difficult-to-etch materials, improving etching promotion and uniformity.
Implementation Method 1
forming a first layer on a surface of a first film by supplying a processing agent to a substrate including the first film
Implementation Method 2
etching the first layer and at least a portion of the first film by supplying an etching agent to the substrate, wherein in (b), when etching the first layer, a substance X that reacts with the etching agent but does not contribute alone to the etching is generated
Data Source
AI summary
There is provided a technique that includes: performing a cycle a predetermined number of times, the cycle including: (a) forming a first layer on a surface of a first film by supplying a processing agent to a substrate including the first film on a surface of the substrate; and (b) etching the first layer and at least a portion of the first film by supplying an etching agent to the substrate, wherein in (b), when etching the first layer, a substance X that reacts with the etching agent but does not contribute alone to the etching is generated, and the first layer and the at least a portion of the first film are etched by using a mixture of the substance X and the etching agent.