Substrate Etching Cycles Using a Modified Layer for 3D Uniformity
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Solution Overview
Problem
Current semiconductor manufacturing processes face challenges in achieving precise control over etching controllability, particularly in forming complex 3D structures where etching rates can fluctuate due to variations in gas exposure and pressure distribution.
Innovation Solution
A method involving a cycle of forming a modified layer on a substrate surface using a DMATMS gas and reacting it with a F2 gas to generate a fluorine-containing radical, which then etches the substrate, allowing for precise control of the etching amount by optimizing the reaction conditions between the modified layer and the substrate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional etching methods are used, then etching process is simple, but etching controllability is poor and etching rates fluctuate
Solution Approach 1:
The etching process is divided into multiple sequential steps: forming a modified layer on the base surface, then reacting halogen-containing gas with the modified layer to generate radicals for etching. This segmentation allows precise control over each step, improving etching controllability while managing process complexity through systematic breakdown of the overall process.
Solution Approach 2:
A modified layer is formed on the base surface before the actual etching reaction occurs. This preliminary action creates a controlled interface that enables precise etching rate control during the subsequent halogen radical reaction, directly addressing the etching controllability issue.
2Adaptability or versatility
If etching is performed in complex 3D structures, then manufacturing capability is enhanced, but etching rate uniformity deteriorates due to gas exposure variations
Solution Approach 1:
The modified layer is formed uniformly across the substrate surface before etching, creating a consistent starting condition that compensates for subsequent gas exposure variations in complex 3D structures, thereby maintaining etching rate uniformity.
Solution Approach 2:
The modified layer acts as an intermediary between the halogen-containing gas and the base material. This intermediary layer ensures uniform reaction kinetics across different regions of complex 3D structures, reducing etching rate fluctuations caused by varying gas exposure.
3Manufacturing precision
If cycle-based etching is used, then etching precision is improved, but processing time increases
Solution Approach 1:
The etching process uses periodic cycling between modified layer formation and halogen radical etching steps. This periodic action enables precise control of etching amount by adjusting the number of cycles, achieving atomic-layer precision while managing processing time through optimized cycle parameters.
Solution Approach 2:
The cycle-based approach applies partial etching in multiple iterations rather than attempting complete etching in a single step. This allows precise control over the final etching depth by stopping after the appropriate number of cycles, achieving high precision without excessive total processing time.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables precise control of the etching amount to a level of one atomic layer or less, ensuring uniformity across the substrate surface even in complex structures, thereby enhancing etching controllability and reducing fluctuations in etching rates.
Implementation Method 1
forming a modified layer on a surface of the base by supplying a modifying agent to the base
Implementation Method 2
causing a reaction between a halogen-containing radical and the base by supplying a halogen-containing gas to the modified layer such that the modified layer reacts with the halogen-containing gas to generate the halogen-containing radical
Implementation Method 3
etching a base exposed on a surface of a substrate by performing a cycle a predetermined number of times
Data Source
AI summary
There is provide a technique that includes: etching a base on a surface of a substrate by performing a cycle a predetermined number of times, the cycle including: (a) forming a layer on a surface of the base by supplying a modifying agent to the base; and (b) causing a reaction between a halogen-containing radical and the base by supplying a halogen-containing gas to the layer such that the layer reacts with the halogen-containing gas to generate the halogen-containing radical.