Substrate Etching with Polymerized Organic Sidewall Protection
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Solution Overview
Problem
Existing substrate processing methods using oxygen gas for film formation cause damage to resist masks and etching target regions due to oxidation, and silicon oxide films are removed during plasma etching, necessitating a solution to suppress such damage and support etching.
Innovation Solution
A method involving the formation of an organic film on the substrate surface through the polymerization of alternating supplies of first and second organic compounds, without using oxygen gas, to create a protective film that suppresses etching during plasma processing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If oxygen gas is used to form a silicon oxide film on the substrate surface, then the side surface of the opening is protected, but the resist mask deforms and the etching target region is oxidized
Solution Approach 1:
The patent replaces oxygen gas with an inert or non-oxidizing atmosphere during film formation. The organic film is formed without oxygen exposure, preventing oxidation of the etching target region and deformation of the resist mask, while still providing the necessary protective function for the side surface of the opening
Solution Approach 2:
The patent changes the chemical composition parameters of the film formation process by using organic compounds instead of oxygen-based processes. This parameter change allows the formation of a protective organic film that does not cause oxidation damage to the substrate components
2Manufacturing precision
If a silicon oxide film is formed to protect the side surface, then the opening width can be adjusted, but the film is removed during plasma etching of silicon oxide regions
Solution Approach 1:
The patent changes the material composition parameter from inorganic silicon oxide to organic material. This parameter change results in a film with different etching resistance characteristics that can maintain its function during plasma etching processes, while still providing precise opening width control
Solution Approach 2:
The patent uses an organic film that combines the functions of dimensional control and etching protection. This composite approach integrates multiple functions into a single material layer, eliminating the need for separate protective films that would otherwise be removed during etching
3Reliability
If alternating supplies of first and second organic compounds are used to form an organic film through polymerization, then substrate damage is suppressed and etching support is maintained, but the process complexity increases
Solution Approach 1:
The patent employs periodic alternating supply of first and second organic compounds during the film formation process. This periodic action enables polymerization to proceed effectively, forming a robust organic film that protects the substrate and maintains etching support, while the alternation pattern can be controlled through standard process timing
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method effectively prevents substrate damage and maintains the functionality of the organic film in adjusting opening widths during plasma etching, ensuring the integrity of both patterned and etching target regions.
Implementation Method 1
an organic compound constituting the organic film is generated by polymerization of the first organic compound and the second organic compound
Implementation Method 2
etching the etching target region by using plasma generated from a processing gas
Data Source
AI summary
A method of processing a substrate is provided. The substrate includes an etching target region and a patterned region. The patterned region is provided on the etching target region. In the method, an organic film is formed on a surface of the substrate. Subsequently, the etching target region is etched by plasma generated from a processing gas. The organic film is formed in a state that the substrate is placed in a processing space within a chamber. When the organic film is formed, a first gas containing a first organic compound is supplied toward the substrate, and then, a second gas containing a second organic compound is supplied toward the substrate. An organic compound constituting the organic film is generated by polymerization of the first organic compound and the second organic compound.