Substrate Etching Control Using By-Product Particle Size Feedback
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Solution Overview
Problem
The existing wet etching processes for removing materials from substrates, such as silicon wafers, require a large amount of processing liquid and have poor use efficiency, leading to inefficiencies in material removal and uniformity.
Innovation Solution
A substrate processing method and apparatus that supplies a processing liquid with a chemical liquid and water to form a surface tension-based liquid layer on the substrate, measures the size distribution of by-product particles, and controls the liquid supply based on this distribution to optimize the etching process, reducing the amount of processing liquid used and improving uniformity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a large amount of processing liquid is supplied to remove material from the substrate, then the material removal efficiency is improved, but the use efficiency of the processing liquid deteriorates
Solution Approach 1:
The patent implements a feedback control mechanism where the supply amount of processing liquid is dynamically adjusted based on real-time detection of by-product particle size distribution. The detection unit measures particle characteristics, and the control unit uses this information to regulate liquid supply, creating a closed-loop system that optimizes both material removal efficiency and processing liquid utilization.
Solution Approach 2:
The patent changes the parameter of processing liquid supply amount from a fixed value to a dynamically adjustable parameter based on by-product particle characteristics. By varying the supply amount according to detected particle size distribution, the system adapts to different etching stages and maintains optimal processing conditions while reducing overall liquid consumption.
2Speed
If the processing liquid is heated to increase reaction speed, then the etching rate is improved, but the amount of processing liquid required increases
Solution Approach 1:
The system uses feedback control to monitor by-product particle characteristics and dynamically adjust processing liquid supply. This allows the heated processing liquid to be supplied in optimized amounts, maintaining high etching rates through temperature while preventing excessive liquid consumption that would otherwise be required.
3Productivity
If the substrate is rotated at high speed to remove by-products, then the cleaning efficiency is improved, but the liquid layer stability deteriorates
Solution Approach 1:
The patent applies dynamics by making the substrate rotation speed variable rather than fixed. The rotation speed is dynamically adjusted based on the detected by-product particle size distribution, allowing the system to optimize between by-product removal efficiency and liquid layer stability for different processing stages and particle conditions.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method significantly reduces the amount of processing liquid required and enhances etch uniformity by dynamically controlling the liquid supply based on by-product particle size, improving the efficiency of material removal in the etching process.
Implementation Method 1
supplying a processing liquid including a chemical liquid and water on a substrate in order to remove a material on the substrate so that a liquid layer maintained by surface tension is formed on the substrate
Implementation Method 2
the size distribution of the by-product particles may be measured by dynamic light scattering
Data Source
AI summary
A substrate processing method and a substrate processing apparatus for removing material on a substrate are disclosed. In order to remove the material, a processing liquid including a chemical liquid and water is supplied on the substrate so that a liquid layer maintained by surface tension is formed. The material is removed from the substrate by a reaction between the material and the processing liquid. A size distribution of by-product particles formed by the reaction between the material and the processing liquid is measured by a dynamic light scattering method. A supply of the processing liquid is controlled based on the size distribution of the by-product particles.