Substrate Etching Workflow with Split Plasma and Thermal Stages
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Solution Overview
Problem
Conventional plasma process facilities face challenges in fine etching adjustment due to simultaneous adsorption and etching processes, leading to reduced Unit Per Equipment Hour (UPEH) and issues with target underlayer film roughness, as they require over 60 minutes per process, limiting efficiency.
Innovation Solution
A substrate treatment system combining dual and single process facilities, where the dual facility performs adsorption through plasma treatment and etching through thermal treatment, with a control apparatus scheduling tasks based on process time ratios and gas types to optimize process efficiency and separate or integrate adsorption and etching processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If adsorption process and etching process are performed simultaneously in a plasma process facility, then the process can be completed in a single apparatus, but fine etching adjustment becomes difficult and UPEH is reduced
Solution Approach 1:
The patent divides the process facility into separate plasma process apparatus and thermal treatment apparatus. The plasma process apparatus performs the adsorption process while the thermal treatment apparatus performs the etching process. This segmentation allows independent control of each process, enabling precise fine etching adjustment without interference from simultaneous adsorption processes.
2Device complexity
If adsorption process and etching process are performed simultaneously in a plasma process facility, then the process can be completed in a single apparatus, but process time exceeds 60 minutes per process reducing UPEH
Solution Approach 1:
The patent segments the facility into multiple specialized apparatus that can operate in parallel. The plasma process apparatus and thermal treatment apparatus work simultaneously on different substrates or different process stages, reducing total process time and increasing UPEH while maintaining the capability to perform both adsorption and etching processes.
Solution Approach 2:
The patent implements continuous substrate transfer between plasma process apparatus and thermal treatment apparatus. While one substrate undergoes plasma treatment, another substrate undergoes thermal treatment, ensuring continuous productive action without idle time between processes, thereby increasing UPEH.
3Device complexity
If adsorption process and etching process are performed simultaneously in a plasma process facility, then the process can be completed in a single apparatus, but attack and diffusion roughness change of target underlayer film occur
Solution Approach 1:
The patent separates the adsorption and etching processes into different apparatus with controlled environments. The thermal treatment apparatus performs etching under controlled thermal conditions without the simultaneous plasma adsorption process, preventing unwanted attack and diffusion roughness changes on the target underlayer film.
Solution Approach 2:
The patent extracts the etching process from the plasma process environment and places it in a separate thermal treatment apparatus. This extraction eliminates the harmful simultaneous plasma adsorption effects that cause attack and diffusion roughness changes on the underlayer film.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for increased UPEH by efficiently scheduling tasks between plasma and thermal treatment processes, enabling easier fine etching adjustments and reducing overall process time, thereby enhancing manufacturing efficiency.
Implementation Method 1
at least one plasma process apparatus configured to perform an adsorption process on a substrate through plasma treatment
Implementation Method 2
perform an adsorption process on a substrate through plasma treatment
Implementation Method 3
at least one thermal treatment apparatus configured to perform an etching process on the substrate through thermal treatment
Data Source
AI summary
Proposed are a substrate treatment system and a substrate treatment method. More particularly, a technology capable of realizing a fine etching adjustment and capable of increasing a Unit Per Equipment Hour (UPEH) by reducing time required for a process is provided.