Substrate Etching Cycles Using an In-Situ Reactive Intermediary
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Solution Overview
Problem
In semiconductor manufacturing, achieving stable and controllable etching of films using etching agents is challenging due to variations in the combination of etching agents and films being processed.
Innovation Solution
A method involving a cycle of forming a first layer on a substrate using processing agents and then etching it with an etching agent, where a substance X reacts with the etching agent to enhance the etching process, allowing for the use of a mixture of substance X and the etching agent to effectively etch the first layer and underlying film.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional etching agent is used to etch a film, then the etching process can be performed, but stable and controllable etching cannot be achieved due to variations in the combination of etching agents and films
Solution Approach 1:
A first layer is introduced as an intermediary between the etching agent and the film to be etched. This first layer reacts with the etching agent to generate substance X, which then acts as a mediator to enable stable and controllable etching of the film. The first layer serves as a buffer that converts the interaction between the etching agent and film into a more predictable two-step process.
Solution Approach 2:
The invention changes the chemical parameters of the etching system by introducing substance X, which is generated through the reaction between the etching agent and the first layer. This substance X modifies the etching chemistry, enabling stable and controllable etching across different film types and etching agent combinations.
2Manufacturing precision
If an etching agent is selected for a specific film combination, then etching can proceed, but controllability deteriorates when the combination varies
Solution Approach 1:
The first layer serves multiple functions: it reacts with various etching agents to generate substance X, which then provides consistent etching control across different film types. This universal approach allows the same first layer to work with multiple etching agent-film combinations, improving both controllability and versatility.
Solution Approach 2:
Substance X acts as a universal intermediary that mediates the etching process between the etching agent and different film types. By generating substance X through the reaction with the first layer, the system achieves consistent controllability across varying film-etching agent combinations.
3Ease of manufacture
If a first layer is formed and then etched with an etching agent, then etching can be performed, but the process becomes complex without the benefit of substance X generation
Solution Approach 1:
The first layer serves itself by reacting with the etching agent to generate substance X, which then facilitates the etching process. This self-service mechanism eliminates the need for external additives or complex process adjustments, simplifying the overall manufacturing process despite the additional cycle step.
Solution Approach 2:
The etching process maintains continuity of useful action by generating substance X in-situ during the etching cycle. This continuous generation of the active etching species ensures consistent etching performance throughout the process, improving ease of manufacture through predictable and stable process behavior.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables stable and controllable etching of films, even those with low reactivity or difficult to etch, improving the uniformity and controllability of the etching process.
Implementation Method 1
forming a first layer on a surface of a first film by supplying a processing agent to a substrate including the first film on a surface of the substrate
Implementation Method 2
when etching the first layer, a substance X that reacts with the etching agent but does not contribute alone to the etching is generated
Implementation Method 3
the first layer and the at least a portion of the first film are etched by using a mixture of the substance X and the etching agent
Data Source
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AI summary
There is provided a technique that includes: performing a cycle a predetermined n umber of times, the cycle including: (a) forming a first layer on a surface of a first film by supplying a processing agent to a substrate including the first film on a surface of the sub strate; and (b) etching the first layer and at least a portion of the first film by supplying a n etching agent to the substrate, wherein in (b), when etching the first layer, a substance X that reacts with the etching agent but does not contribute alone to the etching is gener ated, and the first layer and the at least a portion of the first film are etched by using a mi xture of the substance X and the etching agent.