Substrate Etching Control Using Wafer Temperature Feedback
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Solution Overview
Problem
Existing substrate processing technologies face challenges in accurately etching titanium nitride films on semiconductor wafers without corroding tungsten wiring materials, particularly due to temperature non-uniformity and varying etching liquid flow rates.
Innovation Solution
A substrate processing apparatus equipped with a temperature detector, calculation unit, and execution unit that calculates the etching amount using a given formula based on detected temperature, allowing precise control of the etching process to ensure accurate etching of titanium nitride films while preventing tungsten corrosion.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional etching processing is performed without temperature control, then the processing is simple and fast, but the etching amount varies due to temperature non-uniformity leading to poor manufacturing precision
Solution Approach 1:
The system employs a temperature detector to measure the substrate temperature in real-time during etching processing, and feeds this information back to a calculation unit that computes the etching amount based on the detected temperature and a given calculation formula. This feedback mechanism enables dynamic adjustment and precise control of the etching process, resolving the contradiction between manufacturing precision and device complexity by implementing a targeted control system rather than comprehensive process overhaul.
Solution Approach 2:
The invention utilizes temperature as a key parameter to control the etching amount. By detecting the substrate temperature and using it in a calculation formula to determine the etching amount, the system transforms temperature variations from a source of error into a controllable parameter. This allows precise etching by actively managing the temperature-etching relationship rather than attempting to eliminate all temperature variations.
2Productivity
If the etching liquid flow rate is increased to improve productivity, then more titanium nitride can be etched, but the temperature non-uniformity increases causing varying etching amounts
Solution Approach 1:
The temperature detector continuously monitors substrate temperature during etching processing, providing real-time feedback on temperature non-uniformity. The calculation unit uses this temperature information to compute the actual etching amount, enabling the system to maintain precision even when productivity is increased through higher flow rates. The feedback loop compensates for temperature variations caused by increased processing intensity.
Solution Approach 2:
The invention replaces mechanical control methods (such as manually adjusting flow rates or using complex temperature control mechanisms) with a computational approach. By using a calculation formula that incorporates detected temperature values, the system substitutes physical control mechanisms with mathematical modeling and calculation, simplifying the control system while maintaining precision under varying productivity conditions.
3Manufacturing precision
If temperature measurement and calculation are implemented to improve etching accuracy, then titanium nitride etching precision is improved, but the device complexity and processing time increase
Solution Approach 1:
The system performs temperature detection and etching amount calculation during the etching processing itself, rather than requiring separate pre-processing or post-processing steps. The temperature detector measures substrate temperature in real-time during etching, and the calculation unit computes the etching amount concurrently, integrating the precision control functions into the main processing cycle and minimizing additional time requirements.
Solution Approach 2:
The etching system performs its own temperature monitoring and etching amount calculation using integrated detectors and calculation units. The system is self-sufficient in determining the actual etching conditions and adjusting accordingly, without requiring external measurement equipment or complex external control systems. This self-service capability reduces overall system complexity and processing time while maintaining high precision.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The system achieves high accuracy in etching titanium nitride films while maintaining tungsten integrity by adjusting the etching process based on real-time temperature measurements, ensuring consistent etching amounts and preventing over-etching.
Implementation Method 1
a temperature detector configured to detect a temperature of a substrate on which a processing liquid is discharged
Data Source
AI summary
A substrate processing apparatus includes a temperature detector, a calculation unit and an execution unit. The temperature detector is configured to detect a temperature of a substrate on which a processing liquid is discharged. The calculation unit is configured to calculate, by using a given calculation formula, an etching amount of the substrate based on the temperature detected by the temperature detector. The execution unit configured to perform an etching processing on the substrate by the processing liquid based on the etching amount.