Substrate Processing Nozzle and Exhaust Port Layout
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Solution Overview
Problem
Existing substrate processing technologies face challenges in controlling the in-plane film thickness distribution of films formed on substrates during semiconductor device manufacturing, leading to non-uniformity and variations in film thickness across the substrate.
Innovation Solution
A substrate processing apparatus is designed with a process chamber equipped with multiple nozzles for precursor and reactant gas supply and strategically positioned exhaust ports that do not face the gas ejection holes, allowing for precise control of gas flow and distribution, enhancing the controllability of in-plane film thickness distribution by optimizing the collision and dispersion of gases.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If exhaust ports are positioned to face gas ejection holes for efficient gas removal, then gas evacuation efficiency is improved, but in-plane film thickness uniformity deteriorates due to direct gas flow paths causing non-uniform precursor distribution
Solution Approach 1:
The exhaust ports are positioned asymmetrically relative to the gas ejection holes, specifically arranged not to face them directly. This asymmetric configuration disrupts direct gas flow paths from the ejection holes to the exhaust ports, preventing the formation of preferential flow channels that would cause non-uniform precursor distribution and film thickness variations across the substrate surface.
Solution Approach 2:
The chamber geometry and intermediate space between the gas ejection holes and exhaust ports act as a mediator that redistributes gas flow. By positioning exhaust ports away from direct facing of ejection holes, the gas flow must traverse through intermediate regions of the chamber, allowing for more uniform dispersion of precursor gases before reaching the substrate and improving in-plane film thickness uniformity.
2Manufacturing precision
If multiple nozzles are added to improve film thickness uniformity, then manufacturing precision is improved, but device complexity increases
Solution Approach 1:
Each nozzle in the system is designed to perform multiple functions: supplying precursor or reactant gases while also contributing to the overall gas flow distribution pattern. The exhaust ports serve dual purposes of removing reaction byproducts and regulating chamber pressure. This multi-functionality reduces the need for additional dedicated components, thereby limiting the increase in device complexity despite the use of multiple nozzles.
Solution Approach 2:
The gas supply system is segmented into multiple nozzles positioned at different locations and angles, with each nozzle responsible for a specific region or function. This segmentation allows for precise control of gas distribution across the substrate surface, improving film thickness uniformity while maintaining manageable system complexity through modular design.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration significantly improves the in-plane film thickness uniformity, allowing for a wide range of controllable distributions from center-concave to flat, thereby enhancing the reproducibility and quality of the SiO film formed on the substrate.
Implementation Method 1
a process of forming a film containing a main element on a substrate is performed by supplying a precursor and a reactant to the substrate
Implementation Method 2
a plurality of exhaust ports configured to exhaust an internal atmosphere of the process chamber
Data Source
AI summary
There is provided a technique that includes: a process chamber in which a process of forming a film containing a main element on a substrate is performed; a first nozzle configured to supply a precursor containing the main element to the substrate in the process chart; a second nozzle separated from the first nozzle and configured to supply the precursor to the substrate in the process chamber; a third nozzle configured to supply a reactant to the substrate in the process chamber; and a plurality of first exhaust ports configured to exhaust an internal atmosphere of the process chamber, wherein each of the plurality of first exhaust ports is disposed at a position which does not face a first gas ejection hole of the first nozzle and a second gas ejection hole of the second nozzle, in a plan view.


