Substrate Exhaust Structure for Parasitic Plasma Control
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Solution Overview
Problem
In semiconductor deposition processes using plasma, parasitic plasma generated in areas outside the reaction space, such as the exhaust line, reduces the efficiency of the plasma process and degrades the apparatus' durability.
Innovation Solution
A substrate processing apparatus with a gas exhaust structure that includes a partition wall, an exhaust unit connected to the reaction space, and a conductive extension portion to prevent parasitic plasma generation by reducing the volume of the exhaust space and ensuring efficient gas discharge through the exhaust port.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the exhaust space volume is reduced to prevent parasitic plasma generation, then plasma process efficiency is improved, but gas discharge efficiency may deteriorate
Solution Approach 1:
The exhaust system is segmented into multiple exhaust ports distributed around the exhaust space, rather than using a single exhaust port. This segmentation allows the exhaust function to be distributed across multiple locations, maintaining effective gas discharge even when the overall exhaust space volume is reduced to prevent parasitic plasma generation in the center region
Solution Approach 2:
The exhaust ports are positioned at different locations and orientations around the exhaust space, utilizing spatial distribution in multiple dimensions. This dimensional approach ensures comprehensive gas evacuation coverage while maintaining a compact exhaust space configuration that prevents parasitic plasma formation
2Reliability
If parasitic plasma is prevented in the exhaust space, then apparatus durability is improved, but the complexity of the exhaust structure increases
Solution Approach 1:
The harmful parasitic plasma generation is extracted and eliminated from the exhaust space by reducing its volume and redistributing exhaust functions to multiple ports. This extraction of the harmful element (parasitic plasma) preserves apparatus durability while the complexity increase is minimized through functional redistribution rather than adding complex suppression mechanisms
Solution Approach 2:
Different regions of the exhaust system are given different functions: the central exhaust space is minimized to prevent parasitic plasma, while multiple exhaust ports are strategically positioned to ensure efficient gas discharge. This local differentiation of quality and function achieves durability improvement without excessive overall complexity
3Speed
If multiple exhaust ports are used to maintain gas discharge efficiency, then gas evacuation is improved, but the device complexity increases
Solution Approach 1:
Multiple exhaust ports perform the same universal function of gas evacuation, but are distributed at different locations to collectively serve the entire exhaust space. This multi-functional arrangement improves gas evacuation efficiency through distributed coverage while maintaining relative simplicity by using identical port designs rather than complex differentiated structures
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enhances plasma process efficiency, reduces residual gas volume, improves durability by preventing parasitic plasma formation, and extends the life of components by ensuring efficient gas discharge and minimizing contamination.
Implementation Method 1
a conductive extension portion extending from the exhaust unit toward the reaction space, the conductive extension portion having a same potential difference as a top lid
Implementation Method 2
the conductive extension portion having a same potential difference as a top lid
Implementation Method 3
an exhaust port connected to at least a part of the exhaust unit, wherein the exhaust port is configured to connect the exhaust unit and the exhaust line inside the partition wall
Data Source
AI summary
A substrate processing apparatus having an improved exhaust structure includes a reaction space formed between a processing unit and a substrate support unit, an exhaust unit surrounding the reaction space, an exhaust port with a channel inside, a partition wall with an exhaust line inside, wherein the channel of the exhaust port connects the exhaust unit and the exhaust line.