Substrate Processing Exhaust Ring Layout for Filling Gas Isolation
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Solution Overview
Problem
In substrate processing apparatuses, the filling gas used to prevent reaction gas from entering the bottom of the reactor can contaminate substrates and shorten the apparatus' lifespan by generating reaction by-products and using corrosive cleaning gases.
Innovation Solution
A substrate processing apparatus design featuring a ring structure that separates the first channel for the reaction gas and the second channel for the filling gas, allowing them to exhaust through different paths, preventing their collision and minimizing the filling gas's impact on the substrate processing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If filling gas is supplied from the bottom of the reactor to balance pressure, then reaction gas is prevented from entering the lower space, but the filling gas collides with reaction gas and contaminates the substrate
Solution Approach 1:
The exhaust system is segmented into separate channels: a first exhaust channel for reaction gas and a second exhaust channel for filling gas. This segmentation prevents the collision and mixing of the two gas streams, eliminating substrate contamination while maintaining pressure balance functionality
Solution Approach 2:
A partition wall is introduced as an intermediary structure between the first and second exhaust channels. This partition wall physically separates the reaction gas path from the filling gas path, preventing direct contact between the gases while allowing both to be exhausted to the external environment
2Reliability
If filling gas is used to maintain pressure balance, then reaction gas flow into lower space is prevented, but corrosive cleaning gas damages chamber components
Solution Approach 1:
The exhaust system is divided into separate channels with the second channel dedicated to filling gas and corrosive cleaning gas. This segmentation allows these gases to be exhausted independently without damaging other chamber components, thereby extending apparatus lifespan while maintaining pressure balance
Solution Approach 2:
The partition wall acts as an intermediary that directs corrosive cleaning gas and filling gas through a dedicated second exhaust channel, preventing these corrosive substances from contacting and damaging other chamber components
3Reliability
If filling gas is supplied to prevent reaction gas entry, then pressure balance is achieved, but reaction by-products are generated in the lower space
Solution Approach 1:
The exhaust system is segmented into separate channels where the second channel is dedicated to exhausting filling gas and reaction by-products from the lower space. This segmentation enables efficient removal of harmful by-products while maintaining the pressure balance function
Solution Approach 2:
The partition wall serves as an intermediary structure that directs filling gas and reaction by-products through the second exhaust channel, separating them from the reaction space and enabling their efficient exhaust without affecting the substrate processing
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design minimizes the effect of the filling gas on substrate processing, enhances exhaust efficiency, and prolongs the apparatus' lifespan by preventing contamination and corrosive damage.
Implementation Method 1
a ring structure that separates the first channel for the reaction gas and the second channel for the filling gas, allowing them to exhaust through different paths
Data Source
AI summary
A substrate processing apparatus capable of minimizing the effect of a filling gas in a lower space on the processing of a substrate includes: a substrate supporting unit; at least one ring surrounding the substrate supporting unit; a processing unit on the substrate supporting unit; and an exhaust unit connected to a reaction space between the substrate supporting unit and the processing unit, wherein a first gas in the reaction space is transmitted to the exhaust unit through a first channel, a second gas in a lower space below the substrate supporting unit is transmitted to the exhaust unit through a second channel, and the first channel and the second channel are separated by the at least one ring.