Substrate Processing Exhaust Unit Segmentation for Uniform Gas Flow
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing substrate processing apparatuses face issues with non-uniform gas distribution over substrates, leading to variations in thin film thickness and quality due to uneven gas flow patterns.
Innovation Solution
A substrate processing apparatus featuring a first tube with vertically stacked substrates, a gas supply unit with main and auxiliary injection holes, and an exhaust unit with slit-shaped or angled exhaust holes to ensure uniform gas flow across the substrate surface, along with an exhaust duct to manage gas flow and prevent equipment contamination.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If a single exhaust hole is used to exhaust gas from the processing chamber, then the device complexity is reduced, but the gas flow uniformity across the substrate deteriorates
Solution Approach 1:
The exhaust hole is divided into multiple segmented exhaust holes arranged in a specific pattern across the processing chamber. Each exhaust hole is positioned to create localized exhaust zones that work together to generate uniform gas flow across the entire substrate surface, resolving the contradiction between simple structure and uniform film deposition.
Solution Approach 2:
Different regions of the processing chamber are provided with exhaust holes having different characteristics (positions, sizes, or shapes) to create locally optimized exhaust patterns. This local differentiation ensures that gas flow uniformity is achieved across the entire substrate area while maintaining overall structural simplicity.
2Productivity
If the exhaust hole is positioned to exhaust gas efficiently, then the productivity is improved, but the gas distribution uniformity across the substrate deteriorates
Solution Approach 1:
The processing chamber is divided into multiple exhaust zones with segmented exhaust holes distributed across different regions. This segmentation allows simultaneous efficient gas removal (maintaining productivity) and uniform gas flow distribution across the substrate (maintaining film uniformity).
Solution Approach 2:
The exhaust holes are arranged in a two-dimensional pattern across the processing chamber rather than being concentrated in a single location. This spatial distribution in multiple dimensions enables both efficient overall gas exhaust and localized uniform flow patterns across the substrate surface.
3Productivity
If the gas supply nozzle supplies gas at high flow rate, then the productivity is improved, but the gas flow uniformity across the substrate deteriorates
Solution Approach 1:
The gas supply system is paired with segmented exhaust holes that distribute the exhaust function across multiple locations. This segmentation prevents gas accumulation and maintains uniform flow patterns even at high supply rates, enabling both high productivity and uniform film deposition.
Solution Approach 2:
The exhaust hole parameters (number, size, shape, position) are optimized to match the gas supply flow rate. By adjusting these parameters, the system can handle high flow rates while maintaining uniform gas distribution across the substrate, resolving the contradiction between productivity and film uniformity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The apparatus achieves uniform gas distribution and film thickness across the substrate, enhancing film quality and simplifying equipment maintenance by containing gas flow within the exhaust duct.
Implementation Method 1
a gas supply unit having a plurality of main injection holes to supply a gas into the first tube
Implementation Method 2
an exhaust unit configured to exhaust the gas supplied into the plurality of processing spaces in the first tube to the outside
Implementation Method 3
the processing gas injected from the processing gas supply nozzle is introduced into the exhaust line through an exhaust hole while passing between the substrates to form a thin film on each of the substrates
Data Source
AI summary
Provided is a substrate processing apparatus. The substrate processing apparatus includes a first tube defining an inner space, a substrate holder in which a plurality of substrates are vertically stacked in the inner space of the first tube, the substrate holder defining a plurality of processing spaces in which the substrates are individually processed, a gas supply unit having a plurality of main injection holes each of which is vertically defined to correspond to each of the processing spaces to supply a gas into the first tube, and an exhaust unit configured to exhaust the gas supplied into the plurality of processing spaces in the first tube to the outside. The exhaust unit includes a plurality of exhaust holes facing the main injection holes and vertically arranged in a line to correspond to the processing spaces. Therefore, the gas may smoothly flow on the substrate.