Substrate Chamber Exhaust Valves for Precise CVD-ALD Pressure Control

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Solution Overview

Problem

Existing substrate treating apparatuses face challenges in effectively controlling internal chamber pressure during simultaneous chemical vapor deposition (CVD) and atomic layer deposition (ALD) processes, which are crucial for achieving high-quality deposition results.

Innovation Solution

The apparatus includes a chamber with a gas inlet, gas outlet, and a system of valves and a valve controller that adjusts the degree of opening based on the amount of gas supplied, allowing for precise control of internal pressure through a series of valves in the exhaust pipe, a gas controller, and a vacuum pump.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If a single valve is used in the gas exhaust pipe, then the device complexity is low, but the pressure control precision is insufficient

Engineering Contradiction:
Improvepressure control precisionVSAvoiddevice complexity
Core Design Contradiction:
Measurement precisionVSDevice complexity

Solution Approach 1:

The single valve is divided into multiple valves (first valve and second valve) arranged in series in the gas exhaust pipe. Each valve can be independently controlled to regulate gas flow at different stages, enabling precise pressure control during simultaneous CVD and ALD processes while maintaining manageable system complexity through modular segmentation.

Inventive Principle:
Principle #1Segmentation

2Manufacturing precision

If multiple valves are used in series in the gas exhaust pipe, then the pressure control precision is improved, but the device complexity increases

Engineering Contradiction:
Improvepressure control precisionVSAvoiddevice complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The valve controller dynamically adjusts the opening degrees of the multiple valves based on real-time process requirements. During simultaneous CVD and ALD processes, the controller varies valve openings to maintain optimal pressure conditions for each process type, enabling high manufacturing precision while managing complexity through adaptive control rather than fixed configurations.

Inventive Principle:
Principle #15Dynamics

3Measurement precision

If the valve opening is adjusted frequently to control pressure, then the pressure control precision is improved, but the valve wear increases

Engineering Contradiction:
Improvepressure control precisionVSAvoidvalve durability
Core Design Contradiction:
Measurement precisionVSReliability

Solution Approach 1:

The system performs preliminary actions by pre-positioning valves at optimal opening degrees before pressure adjustments are needed. The controller anticipates pressure changes and pre-adjusts valve positions, reducing the frequency of frequent adjustments and extending valve life while maintaining precise pressure control during the actual process operations.

Inventive Principle:
Principle #10Preliminary action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The apparatus achieves precise control of internal chamber pressure, enhancing the efficacy of the apparatus by ensuring the apparatus by ensuring the apparatus achieves precise control of internal chamber pressure during simultaneous and chemical vapor deposition (CVD) and atomic layer deposition (ALD) processes, which are crucial for achieving high-quality deposition results.

Implementation Method 1

a vacuum pump configured to pump gas from the internal space of the chamber through the gas exhaust pipe

Methodology Applied
Scientific EffectVacuum pumping: Pump

Implementation Method 2

a plurality of valves in series in the gas exhaust pipe configured to open at least a portion of the gas exhaust pipe between the chamber and the vacuum pump

Methodology Applied
Scientific EffectValve flow control: Valve

Data Source

PatentUS20250389024A1Apparatus for treating substrate
Publication Date: 2025.12.25 SAMSUNG ELECTRONICS CO LTD
  • US20250389024A1 patent drawing
  • US20250389024A1 patent drawing
  • US20250389024A1 patent drawing

AI summary

Provided is a substrate treating apparatus including a chamber including an internal space for processing a substrate, and a gas inlet and a gas outlet configured to be intercommunicated with the internal space, a gas supply pipe connected to the gas inlet, a gas controller configured to regulate a supply gas to the internal space of the chamber through the gas supply pipe, a gas exhaust pipe connected to the gas outlet, a vacuum pump configured to pump gas from the internal space of the chamber through the gas exhaust pipe, a plurality of valves in series in the gas exhaust pipe configured to open at least a portion of the gas exhaust pipe between the chamber and the vacuum pump, and a valve controller configured to regulate a degree of opening for each valve of the plurality of valves.