Substrate Film Deposition with Adsorption Inhibition for Uniform Coverage
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Solution Overview
Problem
Existing semiconductor manufacturing processes face challenges in achieving uniform film thickness and step coverage on substrates, particularly in recessed areas, due to uneven precursor gas adsorption, leading to inefficiencies in film formation.
Innovation Solution
A method involving the sequential supply of an adsorption inhibition gas, precursor gas, and reaction gas to the substrate, with controlled exposure amounts, where the precursor gas exposure exceeds that of the adsorption inhibition gas, to optimize film formation and reduce uneven adsorption, thereby improving film thickness uniformity and step coverage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If precursor gas is supplied to form a film on the substrate, then film formation is achieved, but uneven film thickness and poor step coverage occur due to excessive precursor gas adsorption at specific sites
Solution Approach 1:
The patent applies preliminary anti-action by introducing an adsorption inhibition gas before the precursor gas to prevent excessive adsorption of the precursor gas at specific sites. The adsorption inhibition gas is supplied first to the substrate surface, creating a protective layer that reduces subsequent precursor gas adsorption, thereby preventing the formation of uneven film thickness and improving step coverage.
Solution Approach 2:
The adsorption inhibition gas acts as an intermediary substance between the substrate and the precursor gas. It mediates the interaction by selectively adsorbing on the substrate surface and preventing direct excessive adsorption of the precursor gas, thus controlling the film formation process to achieve more uniform film thickness and better step coverage.
2Manufacturing precision
If adsorption inhibition gas is supplied to suppress precursor gas adsorption, then film thickness uniformity improves, but excessive use of adsorption inhibition gas may reduce productivity
Solution Approach 1:
The patent applies partial action by controlling the amount of adsorption inhibition gas to be less than the amount of precursor gas. This partial use of adsorption inhibition gas is sufficient to suppress excessive precursor gas adsorption and improve film uniformity, while avoiding the productivity loss that would result from equal or excessive amounts of adsorption inhibition gas.
Solution Approach 2:
The patent optimizes the exposure amounts of both adsorption inhibition gas and precursor gas to achieve the desired balance. By carefully controlling the parameters of gas supply (exposure amounts), the process achieves improved film thickness uniformity while maintaining acceptable productivity, resolving the contradiction between precision and efficiency.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances film thickness uniformity and step coverage by suppressing excessive precursor gas adsorption at specific sites, allowing for more even consumption and improved film characteristics, particularly in recessed areas, while reducing impurities and maintaining high film quality.
Implementation Method 1
supplying an adsorption inhibition gas to a substrate... suppressing excessive precursor gas adsorption at specific sites
Implementation Method 2
forming a film containing an element contained in the precursor gas on the substrate
Data Source
AI summary
There is provided a technique that includes: a) supplying an adsorption inhibition gas to a substrate; b) supplying a precursor gas to the substrate; c) supplying a reaction gas to the substrate; and d) forming a film containing an element contained in the precursor gas on the substrate by performing a), b), and c) a predetermined number of times in a state where an amount of exposure of the precursor gas supplied in b) to the substrate is larger than an amount of exposure of the adsorption inhibition gas supplied in a) to the substrate.