Substrate Film Processing for Precise Air Gap Formation
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The challenge in semiconductor manufacturing is to precisely form an air gap on a substrate with high accuracy as devices miniaturize.
Innovation Solution
A method involving the formation of a third film on a first and second film on a substrate by supplying precursors and reactants under conditions where physical adsorption dominates, followed by etching to remove the first film while retaining the second and third films.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional plasma-based methods are used to form air gaps, then the air gap can be formed, but plasma damage occurs and manufacturing precision decreases
Solution Approach 1:
The patent changes the fundamental parameter of the processing atmosphere from plasma state to non-plasma state. By performing film formation and etching steps in a non-plasma atmosphere, the method eliminates plasma damage to the substrate while maintaining high precision air gap formation through controlled chemical reactions and physical adsorption processes
Solution Approach 2:
The patent employs a non-plasma inert atmosphere environment for the film formation and etching processes. This inert environment protects the substrate from plasma-induced damage while still enabling the necessary chemical reactions to proceed through alternative mechanisms such as controlled chemical vapor deposition and selective etching with etching agents
2Manufacturing precision
If multiple process steps are used to form air gaps with high precision, then manufacturing precision improves, but device complexity and processing time increase
Solution Approach 1:
The patent merges multiple process steps into a more integrated sequence. By forming the third film under specific conditions where physical adsorption dominates, and then using a single etching step with appropriate etching agents to remove the first film while retaining the second and third films, the method achieves high precision air gap formation with reduced process complexity compared to conventional multi-step plasma processes
Solution Approach 2:
The patent performs preliminary film formation steps under controlled conditions where physical adsorption dominates before the etching step. This preliminary action of forming the third film with specific adsorption characteristics prepares the structure for selective etching, enabling high precision air gap formation while simplifying the overall process by establishing clear differentiation between removable and retained films beforehand
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables precise formation of an air gap with high accuracy, simplifies the process, enhances productivity, and reduces plasma damage by performing steps in a non-plasma atmosphere.
Implementation Method 1
physical adsorption of the precursor occurs more predominantly than chemical adsorption of the precursor
Implementation Method 2
exposing the surface of the substrate where the third film is formed on the first film and the second film to an etching agent that reacts with the first film
Data Source
AI summary
There is provided a technique that includes: (a) forming a third film on a first film and a second film formed on a surface of the substrate by supplying a precursor, a first reactant, and a second reactant to the substrate under a condition in which thermal decomposition of the precursor does not occur and physical adsorption of the precursor occurs more predominantly than chemical adsorption of the precursor when the precursor is present alone; and (b) removing the first film while retaining the second film and the third film by exposing the surface of the substrate where the third film is formed on the first film and the second film to an etching agent that reacts with the first film.