Substrate Film Removal After Heat Treatment Using Altering Agents

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Solution Overview

Problem

Existing methods face difficulties in selectively removing films after heat treatment in semiconductor manufacturing processes.

Innovation Solution

A method involving forming a film on a substrate, heat-treating it, altering the film with an altering agent, and then removing it using a removing agent, with specific steps to control the process.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Strength

If heat treatment is performed to increase processing resistance of a film, then the film becomes more resistant to removal, but it becomes difficult to remove the film after predetermined processing is completed

Engineering Contradiction:

Improveprocessing resistanceVSAvoidease of removal

Core Design Contradiction:

StrengthVSEase of manufacture

Solution Approach 1:

The patent applies parameter changes by exposing the heat-treated film to an altering agent that modifies the film's chemical or physical properties. This alters the film's state from a heat-treated, high-resistance state to an altered state that is more susceptible to removal by the removing agent, thus resolving the contradiction between maintaining high processing resistance during manufacturing and enabling easy removal when needed

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The altering agent serves as an intermediary substance between the heat-treated film and the removing agent. This intermediary modifies the film's properties to enable subsequent removal, bridging the gap between the film's high-resistance state and its removable state without directly compromising the film's strength during the manufacturing process

Inventive Principle:

Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Enables selective and efficient removal of films post-heat treatment, improving the manufacturing process by ensuring precise control over film formation and removal.

Implementation Method 1

forming a film on a substrate by exposing the substrate to a film-forming agent

Methodology Applied

Scientific EffectChemical Vapour Deposition: Chemical Vapour Deposition

Implementation Method 2

heat-treating the film under a second temperature higher than the first temperature

Methodology Applied

Scientific EffectHeat treatment: Heat Treatment

Implementation Method 3

altering the heat-treated film by exposing the heat-treated film to an altering agent

Methodology Applied

Scientific EffectChemical alteration:

Implementation Method 4

removing the altered film by exposing the altered film to a removing agent

Methodology Applied

Scientific EffectChemical removal:

Data Source

PatentUS12424463B2Method of processing substrate, method of manufacturing semiconductor device, substrate processing system, and recording medium

Publication Date: 2025.09.23 KOKUSAI DENKI KK

AI summary

There is provided a technique that includes (a) forming a film on a substrate by exposing the substrate to a film-forming agent under a first temperature; (b) heat-treating the film under a second temperature higher than the first temperature; (c) altering the heat-treated film by exposing the heat-treated film to an altering agent; and (d) removing the altered film by exposing the altered film to a removing agent.