Substrate Film Deposition Sequence for Stable Composition Ratio
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Solution Overview
Problem
Desorption of predetermined elements during film formation leads to deviations from the desired composition ratio in semiconductor manufacturing processes.
Innovation Solution
A cyclic process involving the sequential supply of gases containing specific elements and plasma-excited hydrogen-containing gases to a substrate, including steps of supplying a first gas with a halogen element, a second gas with hydrogen and a different element, plasma-excited hydrogen-containing gas, and a third gas with a different element, to maintain the desired composition ratio.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a film is formed by supplying gases containing specific elements to a substrate, then the film composition can be controlled, but desorption of predetermined elements occurs leading to deviation from desired composition ratio
Solution Approach 1:
The patent applies periodic action by implementing a cyclic film formation process that repeats a specific sequence of gas supply steps multiple times. Each cycle includes supplying a first gas containing a first element and halogen, then a second gas containing hydrogen and a second element, followed by a third gas containing a third element. This periodic repetition ensures consistent composition control while preventing element desorption through maintained reactive atmosphere.
Solution Approach 2:
The patent ensures continuity of useful action by designing a process where gas supply steps are performed sequentially without interruption, and cycles are repeated continuously. The film formation process maintains continuous exposure to reactive gases throughout each cycle and across multiple cycles, preventing periods where element desorption could occur without protective atmosphere.
2Manufacturing precision
If a cyclic process with multiple gas supply steps is performed, then element desorption is prevented and composition ratio is maintained, but the process complexity increases
Solution Approach 1:
The patent applies segmentation by dividing the film formation process into distinct sequential steps within each cycle: (1) supplying first gas containing first element and halogen, (2) supplying second gas containing hydrogen and second element, and (3) supplying third gas containing third element. This segmentation allows precise control of element incorporation while maintaining manageable process structure through clear step definition.
Solution Approach 2:
The patent utilizes parameter changes by varying gas composition, flow rates, and supply timing throughout the cyclic process. Each gas supply step uses specific parameter settings optimized for incorporating particular elements, and these parameters are systematically adjusted across cycles to achieve desired film composition while managing process complexity through standardized parameter sets.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Prevents desorption of elements, ensuring the film maintains the desired composition ratio, thereby enhancing the stability and consistency of semiconductor film formation.
Implementation Method 1
supplying a plasma-excited hydrogen-containing gas, which is different from the second gas, to the substrate
Implementation Method 2
supplying a second gas, which contains hydrogen and the second element that is different from the first element, to the substrate
Implementation Method 3
supplying a first gas, which contains the first element and a halogen element, to the substrate
Data Source
AI summary
There is provided a technique that includes: forming a film, which contains a first element, a second element and a third element, on a substrate by performing a cycle a predetermined number of times, the cycle including performing: (a) supplying a first gas, which contains the first element and a halogen element, to the substrate; (b) supplying a second gas, which contains hydrogen and the second element that is different from the first element, to the substrate; (c) supplying a plasma-excited hydrogen-containing gas, which is different from the second gas, to the substrate; and (d) supplying a third gas, which contains the third element that is different from the first element and the second element, to the substrate, wherein (c) is performed after (a) and (b) and before (d).