Substrate Film Deposition with Halogen By-Product Removal
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Solution Overview
Problem
The deposition rate in the process of forming a film on a substrate during semiconductor device manufacturing is often hindered by the accumulation of halogen-based by-products, which inhibit the reaction between precursor gases and the substrate surface.
Innovation Solution
A method involving the consecutive supply of specific gas combinations, including a halogen-containing first gas, a reducing third gas, and a reducing fourth gas, is employed to react with and remove these by-products, thereby enhancing the deposition rate by ensuring efficient film formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a conventional film formation process is used, then the process is simple, but the deposition rate decreases due to halogen by-product accumulation
Solution Approach 1:
The film formation process is divided into multiple discrete gas supply steps: (a) supplying first gas containing first element and halogen, (b) supplying second gas containing second element, (c) supplying third gas with reducing character, and (d) supplying fourth gas with reducing character. This segmentation allows each gas to perform its specific function sequentially, removing halogen by-products while forming the desired film, thereby improving deposition rate without compromising process control
Solution Approach 2:
The patent implements continuous useful action by consecutively performing gas supply steps (a) and (d), and (b) and (c), ensuring that halogen by-products are continuously removed throughout the film formation process. This continuous action prevents by-product accumulation that would otherwise inhibit deposition, maintaining high deposition rates throughout the process
2Manufacturing precision
If halogen-containing gases are supplied for film formation, then the film can be formed with desired composition, but halogen by-products accumulate and inhibit further deposition
Solution Approach 1:
The patent converts the harmful halogen by-products into beneficial removal targets by introducing reducing gases (third and fourth gases) that specifically react with and remove halogen-containing by-products. The halogen by-products, which initially inhibit deposition, are transformed into removable species through reduction reactions, thereby eliminating their harmful effect while preserving the film formation process
Solution Approach 2:
The reducing gases (third and fourth gases) act as intermediaries that mediate between the halogen-containing first gas and the substrate. These intermediary gases react with halogen by-products to form removable reduced halogen species, facilitating the removal of harmful by-products while allowing the desired film composition to be formed from the first and second gases
3Productivity
If reducing gases are supplied to remove by-products, then the deposition rate improves, but additional gas supply steps increase process complexity
Solution Approach 1:
The patent merges the film formation function and the by-product removal function into a single integrated process cycle. The four gas supply steps (a), (b), (c), and (d) are combined and repeated a predetermined number of times, allowing simultaneous achievement of film formation with controlled composition and continuous by-product removal, thereby improving deposition rate without requiring separate dedicated removal steps
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach improves the deposition rate by reducing the presence of by-products on the substrate surface, leading to better film quality and increased efficiency in semiconductor device manufacturing.
Implementation Method 1
supplying a third gas containing a third element and having a reducing character to the substrate; and supplying a fourth gas containing a fourth element and having a reducing character to the substrate
Implementation Method 2
supplying a first gas containing the first element and a halogen element to the substrate
Data Source
AI summary
A technique includes forming a film containing a first element and a second element different from the first element on the substrate by performing a process a predetermined number of times, the process including: (a) supplying a first gas containing the first element and a halogen element to the substrate; (b) supplying a second gas containing the second element to the substrate; (c) supplying a third gas containing a third element and having a reducing character to the substrate; and (d) supplying a fourth gas containing a fourth element and having a reducing character to the substrate, wherein (a) and (d) are performed consecutively, and (b) and (c) are performed consecutively.