Substrate Film Deposition Sequence Without Intermediate Purges
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Solution Overview
Problem
Current substrate processing methods for forming films in semiconductor devices face challenges in achieving optimal film characteristics, such as coverage rate and continuity, due to limitations in gas supply sequences and purge operations, which affect the adsorption and reaction processes.
Innovation Solution
A technique involving sequential supplies of a source gas containing a first element and a halogen element, followed by reducing gases, without intermediate purges, to enhance adsorption and reaction efficiency, and repeated cycles to achieve saturated adsorption states, improving film formation on substrates.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If intermediate purges are performed between gas supply steps, then contamination is reduced, but film coverage rate and continuity deteriorate
Solution Approach 1:
The patent applies periodic action by implementing repeated cycles of source gas supply followed by reducing gas supply without intermediate purges. This periodic cycling allows the film formation process to proceed continuously, improving coverage rate and continuity while avoiding contamination from purge operations. The cycles are repeated multiple times to achieve saturated adsorption states and optimal film characteristics.
Solution Approach 2:
The patent implements continuity of useful action by eliminating intermediate purge steps between source gas and reducing gas supply. This continuous gas supply sequence maintains the film formation process without interruption, preventing contamination that would occur during purging while ensuring high coverage rate and continuity of the deposited film.
2Manufacturing precision
If multiple gas supply cycles are performed, then film characteristics improve, but processing time increases
Solution Approach 1:
The patent achieves continuous film formation by performing multiple gas supply cycles without intermediate purges. This continuous action allows the film to develop optimal characteristics through repeated adsorption and reaction processes while minimizing idle time, thus improving film quality without proportionally increasing total processing time.
Solution Approach 2:
The patent applies preliminary action by performing repeated gas supply cycles that establish saturated adsorption states before final film completion. This preliminary cycling ensures optimal film characteristics are achieved in advance, allowing the subsequent processing to proceed efficiently without requiring additional corrective steps.
3Productivity
If source gas is supplied without intermediate purges, then adsorption efficiency increases, but gas contamination increases
Solution Approach 1:
The patent implements continuous gas supply sequences where source gas is followed immediately by reducing gas without intermediate purges. This continuity maximizes adsorption efficiency by maintaining constant gas flow and preventing adsorption site depletion, while the reducing gas subsequently removes any potential contamination, achieving both high productivity and gas purity.
Solution Approach 2:
The patent uses the reducing gas as an intermediary that follows the source gas without intermediate purging. This intermediary gas serves dual functions: it reacts with the adsorbed source gas to form the desired film while simultaneously removing any contaminant gases, thus enabling high adsorption efficiency without compromising gas purity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach improves the coverage rate, continuity, and overall characteristics of the film formed on substrates by optimizing gas adsorption and reaction processes, leading to better film quality and reduced processing time.
Implementation Method 1
performing a first supply of a source gas containing a first element and a halogen element to a substrate
Implementation Method 2
performing a supply of a first reducing gas to the substrate
Implementation Method 3
performing a supply of a second reducing gas to the substrate
Data Source
AI summary
It is possible to improve characteristics of a film formed on a substrate. There is provided a technique that includes: (a) performing a first supply of a source gas containing a first element and a halogen element to a substrate; (b) performing a supply of a first reducing gas to the substrate; (c) performing a supply of a second reducing gas to the substrate; (d) performing a second supply of the source gas to the substrate, (e) executing (b) and (d) X times without performing a purge between (b) and (d); and (f) executing (e) and (c) Y times.