Substrate Film Formation Using Selective Gas Adsorption for Step Coverage
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Solution Overview
Problem
Existing substrate processing techniques face challenges in achieving good step coverage and filling characteristics during film formation, particularly in finer and more complex LSI manufacturing processes.
Innovation Solution
A technique involving the modification of substrate portions by supplying specific modifying gases and process gases, where the decomposition temperatures of the gases differ, allowing for preferential adsorption of elements in specific regions of the substrate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional film formation techniques are used, then manufacturing process is simple, but step coverage and filling characteristics are poor
Solution Approach 1:
The film formation process is segmented into multiple sequential steps: first modifying gas supply step, first process gas supply step, second modifying gas supply step, and second process gas supply step. Each step targets specific regions of the substrate by controlling gas decomposition temperatures, enabling precise spatial control of element adsorption and improving step coverage in complex substrate structures
Solution Approach 2:
Different regions of the substrate receive different gas treatments based on their decomposition temperature characteristics. The first modifying gas preferentially modifies high decomposition temperature regions, while the second modifying gas targets low decomposition temperature regions. This local differentiation enables preferential adsorption of first and second elements in specific regions, achieving uniform film thickness across complex topographies
2Manufacturing precision
If modifying gases with different decomposition temperatures are used, then element adsorption is controlled in specific regions, but process steps increase
Solution Approach 1:
The process exploits changes in decomposition temperature parameters of different modifying gases to achieve selective adsorption. By selecting modifying gases with distinct decomposition temperature characteristics, the process controls which regions of the substrate are modified at each step, thereby precisely controlling element adsorption locations without requiring additional masking or patterning steps
Solution Approach 2:
The modifying gases are supplied in advance to pre-modify specific regions of the substrate before process gases are introduced. This preliminary modification creates regional differences in surface properties that guide subsequent element adsorption, ensuring that first and second elements adsorb preferentially in desired locations before film formation begins
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach improves step coverage and filling characteristics by controlling the adsorption of elements in film formation, leading to more uniform film thickness and better performance in complex substrate structures.
Implementation Method 1
modifying at least a portion of a substrate by supplying a first modifying gas to the substrate
Implementation Method 2
adsorbing a first element preferentially to a region that is not modified by the first modifying gas, by supplying a first process gas containing the first element to the substrate
Implementation Method 3
modifying at least a portion of the substrate by supplying a second modifying gas to the substrate, wherein a decomposition temperature of the second modifying gas is different from a decomposition temperature of the first modifying gas
Implementation Method 4
adsorbing a second element preferentially to a region that is not modified by the second modifying gas, by supplying a second process gas containing the second element to the substrate
Data Source
AI summary
The present disclosure provides a technique for improving step coverage in film formation. According to one embodiment, there is provided a technique including: (a1) modifying at least a portion of the substrate by supplying a first modifying gas to the substrate; (a2) adsorbing a first element preferentially to a region that is not modified by the first modifying gas, by supplying a first process gas containing the first element to the substrate; (b1) modifying at least a portion of the substrate by supplying a second modifying gas to the substrate, wherein a decomposition temperature of the second modifying gas is different from a decomposition temperature of the first modifying gas; and (b2) adsorbing a second element preferentially to a region that is not modified by the second modifying gas, by supplying a second process gas containing the second element to the substrate.