Substrate Film Processing for Selective Post-Heat Removal

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Solution Overview

Problem

Existing methods face difficulties in selectively removing films after heat treatment in semiconductor manufacturing processes.

Innovation Solution

A method involving forming a film on a substrate, heat-treating it, altering the film with an altering agent, and then removing it using a removing agent, with specific steps to enhance film selectivity and ease of removal.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Strength

If heat treatment is performed to increase processing resistance of a film, then the film becomes more resistant to removal, but it becomes difficult to remove the film after predetermined processing is completed

Engineering Contradiction:
Improveprocessing resistanceVSAvoidease of removal
Core Design Contradiction:
StrengthVSEase of manufacture

Solution Approach 1:

The patent applies parameter changes by performing heat treatment at a first temperature to increase processing resistance, then performing a second heat treatment at a higher second temperature to modify the film's properties for easier removal. This sequential temperature parameter change resolves the contradiction by making the film resistant during processing but removable afterward.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent uses preliminary action by performing the first heat treatment to increase processing resistance before the predetermined processing is completed. This preliminary strengthening allows the film to withstand processing, and then a second heat treatment is applied afterward to enable removal, thus resolving the contradiction between strength and ease of removal.

Inventive Principle:
Principle #10Preliminary action

2Reliability

If heat treatment is performed to improve film properties, then processing resistance increases, but selective removal capability is lost

Engineering Contradiction:
Improveprocessing resistanceVSAvoidselective removal capability
Core Design Contradiction:
ReliabilityVSAdaptability or versatility

Solution Approach 1:

The patent resolves this contradiction by changing temperature parameters in two stages: first heat treatment at a lower temperature improves film reliability and processing resistance, while second heat treatment at a higher temperature modifies the film to enable selective removal. This sequential parameter change maintains both reliability and adaptability.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Enables selective and efficient removal of films post-heat treatment, improving the semiconductor manufacturing process by ensuring precise control over film formation and removal.

Implementation Method 1

forming a film on a substrate by exposing the substrate to a film-forming agent under a first temperature

Methodology Applied
Scientific EffectChemical vapor deposition: Chemical Vapour Deposition

Implementation Method 2

heat-treating the film under a second temperature higher than the first temperature

Methodology Applied
Scientific EffectHeat treatment: Heat Treatment

Implementation Method 3

altering the heat-treated film by exposing the heat-treated film to an altering agent

Methodology Applied
Scientific EffectChemical reaction: Chemical Bonding

Implementation Method 4

removing the altered film by exposing the altered film to a removing agent

Methodology Applied
Scientific EffectChemical etching: Chemical Bonding

Data Source

PatentUS20250391678A1Method of processing substrate, method of manufacturing semiconductor device, substrate processing system, and recording medium
Publication Date: 2025.12.25 KOKUSAI DENKI KK
  • US20250391678A1 patent drawing
  • US20250391678A1 patent drawing
  • US20250391678A1 patent drawing

AI summary

There is provided a technique that includes (a) forming a film on a substrate by exposing the substrate to a film-forming agent under a first temperature; (b) heat-treating the film under a second temperature higher than the first temperature; (c) altering the heat-treated film by exposing the heat-treated film to an altering agent; and (d) removing the altered film by exposing the altered film to a removing agent.