Substrate Film Deposition-Etch Sequencing for Uniform Selectivity
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Solution Overview
Problem
The formation of films on substrates in semiconductor manufacturing can result in impaired selectivity, leading to variations in film characteristics.
Innovation Solution
A method involving the sequential supply of a first source gas and a reactive gas for film formation, followed by the supply of a second source gas and reactive gas for etching, with controlled gas flow rates and pressures to enhance film characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a film is formed by supplying source gas and reactive gas to a substrate, then film formation is achieved, but selectivity is impaired causing variations in film characteristics
Solution Approach 1:
The patent divides the film formation process into multiple sequential steps with different gas supply conditions. Each step forms a portion of the film with controlled characteristics, preventing the selectivity impairment that occurs in single-step formation. The process segments gas supply into first and second source gases supplied at different timings and flow rates, achieving both uniform film characteristics and maintained selectivity.
Solution Approach 2:
The patent employs periodic alternation between supplying source gas and reactive gas, with specific on/off timings and flow rate variations. This periodic gas supply pattern allows the film to form with consistent characteristics while maintaining selectivity through controlled reaction cycles, addressing the contradiction between film uniformity and selectivity preservation.
2Manufacturing precision
If gas flow rates and pressures are controlled to enhance film characteristics, then film quality improves, but process complexity increases
Solution Approach 1:
The patent systematically varies gas flow rates and supply timings as controllable parameters to optimize film characteristics. By changing parameters such as source gas flow rate, reactive gas flow rate, and supply timing in a structured manner across multiple steps, the patent achieves enhanced film quality while keeping the process manageable through defined parameter sets for each step.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Improves the uniformity and selectivity of film formation on substrates by effectively removing nuclei and voids, resulting in films with enhanced properties.
Implementation Method 1
forming a film by supplying a first source gas and a reactive gas to a substrate
Implementation Method 2
etching the substrate by supplying a second source gas and the reactive gas to the substrate after (a)
Data Source
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AI summary
Provided is a technique whereby it is possible to improve the characteristics of a film to be formed on a substrate. This method includes: (a) a step of depositing a film by supplying a first raw material gas and a reaction gas to the substrate; and (b) a step of etching the substrate by supplying a second raw material gas and the reaction gas to the substrate after (a).