Substrate Film Deposition Sequence for 3D Step Coverage

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Solution Overview

Problem

Existing methods face challenges in achieving optimal step coverage of films formed on substrates with complex three-dimensional structures, such as trenches and grooves, during semiconductor manufacturing processes.

Innovation Solution

A method involving a cycle of supplying an inhibitor, a first precursor, a second precursor, and a reactant to the substrate, with each step optimized to enhance film formation on the substrate, including flash supply techniques to improve coverage on recessed areas.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If conventional film formation methods are used on substrates with three-dimensional structures, then the film formation process is simple, but the step coverage is insufficient

Engineering Contradiction:
Improvestep coverageVSAvoidprocess complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The film formation process is divided into multiple sequential steps: inhibitor supply step, first precursor supply step, second precursor supply step, and reactant supply step. Each step targets specific regions of the three-dimensional substrate structure, with the inhibitor preferentially adsorbing in recessed areas to guide subsequent precursor deposition, thereby achieving improved step coverage through segmented processing

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The inhibitor is supplied and adsorbed onto the substrate surface before precursor supply. This preliminary action creates a selective adsorption pattern where the inhibitor occupies recessed areas first, preventing precursor adsorption in those regions during subsequent steps. This pre-established pattern enables controlled film formation with enhanced step coverage

Inventive Principle:
Principle #10Preliminary action

2Manufacturing precision

If multiple cycles are performed to improve film coverage, then step coverage improves, but processing time increases

Engineering Contradiction:
Improvestep coverageVSAvoidprocessing time
Core Design Contradiction:
Manufacturing precisionVSProductivity

Solution Approach 1:

The four-step sequence (inhibitor supply, first precursor supply, second precursor supply, reactant supply) is designed to be executed continuously in one cycle. Each step flows into the next without interruption, maintaining continuous useful action. The inhibitor remains adsorbed on the substrate throughout the subsequent precursor and reactant supply steps, providing ongoing guidance for film formation. This continuous multi-step process achieves improved step coverage in a single integrated cycle rather than requiring multiple separate cycles

Inventive Principle:
Principle #20Continuity of useful action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The method enhances film coverage on substrates with three-dimensional structures by preferentially adsorbing precursors in recessed areas, resulting in improved film formation and adherence.

Implementation Method 1

an inhibitor is supplied to a substrate; a first precursor is supplied from a first reservoir to the substrate

Methodology Applied
Scientific EffectAdsorption: Adsorption

Implementation Method 2

a first precursor is supplied from a first reservoir to the substrate; a second precursor is supplied from a second reservoir to the substrate; a reactant is supplied to the substrate

Methodology Applied
Scientific EffectChemical Vapour Deposition: Chemical Vapour Deposition

Data Source

PatentUS20250305132A1Method of processing substrate, method of manufacturing semiconductor device, recording medium, substrate processing apparatus, and gas supply system
Publication Date: 2025.10.02 KOKUSAI DENKI KK
  • US20250305132A1 patent drawing
  • US20250305132A1 patent drawing
  • US20250305132A1 patent drawing

AI summary

There is provided a technique that includes forming a film on a substrate by performing a cycle a predetermined number of times, the cycle including: (a) supplying an inhibitor to the substrate; (b) supplying a first precursor from a first reservoir to the substrate; (c) supplying a second precursor from a second reservoir to the substrate; and (d) supplying a reactant to the substrate.