Substrate Processing Film Thickness Correction
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Solution Overview
Problem
In semiconductor manufacturing, the use of dummy wafers to improve film thickness uniformity increases manufacturing costs and can influence film thickness due to varying reaction gas consumption based on wafer surface conditions, leading to disturbances in film deposition processes.
Innovation Solution
A substrate processing system that calculates and corrects film deposition conditions based on surface state and arrangement state information of substrates, using a storage unit, calculation unit, and correction unit to remove the influence of disturbances, eliminating the need for dummy wafers and improving film thickness uniformity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If dummy wafers are used to improve film thickness uniformity, then film deposition uniformity is improved, but manufacturing cost increases and disturbance in film deposition occurs
Solution Approach 1:
The patent extracts and removes the dummy wafers from the film deposition process. Instead of using dummy wafers to absorb disturbances, the system calculates correction values based on substrate arrangement state information and surface state information to eliminate the need for dummy wafers entirely, thereby removing the source of disturbance while maintaining film thickness uniformity
Solution Approach 2:
The patent implements a feedback mechanism where the control device calculates correction values based on measured film thickness characteristics and substrate information, then uses these correction values to adjust subsequent film deposition conditions. This closed-loop feedback system eliminates disturbances without requiring dummy wafers
2Manufacturing precision
If dummy wafers are used to improve film thickness uniformity, then film deposition uniformity is improved, but manufacturing cost increases
Solution Approach 1:
The patent removes dummy wafers from the manufacturing process entirely. By calculating correction values based on substrate arrangement and surface state information, the system achieves film thickness uniformity without the additional material cost of dummy wafers
Solution Approach 2:
The system uses information from the actual substrates themselves (arrangement state and surface state) to calculate correction values, allowing the substrates to serve their own purpose in achieving uniform film deposition without requiring separate dummy wafers
3Adaptability or versatility
If reaction gas consumption varies based on wafer surface conditions, then film deposition characteristic changes, but control accuracy decreases
Solution Approach 1:
The control device measures actual film thickness characteristics and calculates correction values based on these measurements combined with substrate information. This feedback loop compensates for variations in reaction gas consumption due to different surface conditions, maintaining control accuracy
Solution Approach 2:
The system changes film deposition conditions (such as deposition time or temperature) based on calculated correction values that account for variations in substrate surface conditions and reaction gas consumption patterns, thereby maintaining control accuracy across different substrate states
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for precise control of film deposition, reducing manufacturing costs and improving film thickness uniformity by accounting for substrate surface states and arrangement, thereby enhancing the accuracy of film deposition processes.
Implementation Method 1
film deposition is performed on a substrate by a CVD processing, an ALD processing
Implementation Method 2
film deposition is performed on a substrate by a CVD processing, an ALD processing
Data Source
AI summary
Disclosed is a substrate processing system that performs a film deposition on plural substrates in a processing container using a film deposition condition calculated based on a characteristic of a film deposited on at least one of the substrates. The substrate processing system includes: a storage unit storing surface state information and arrangement state information that represent influences of a surface state of the one substrate and an arrangement state of the plural substrates on the characteristic of the film deposited on the one substrate, respectively; a calculation unit calculating information that represents an influence of the plural substrates on the characteristic of the film on the one substrate based on the surface state information and the arrangement state information stored in the storage unit; and a correction unit correcting the characteristic of the film deposited on the one substrate based on the information calculated by the calculation unit.