Substrate Processing Fluid Flow Control for Particle Prevention
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Solution Overview
Problem
Long periods of inactivity in substrate processing apparatuses lead to increased internal pressure and particle generation, causing uneven film deposition and defects during the resumption of the process due to accumulated particles in the source tank and pipes.
Innovation Solution
A substrate processing method and apparatus where a fluid is supplied between substrate holding areas on a rotating turntable, with the flow rate controlled to prevent particles from reaching the substrate surfaces during startup or shutdown, ensuring uniform deposition by directing the fluid supply to areas between the substrates rather than directly on them.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If the substrate processing apparatus is stopped for a long period of time, then energy consumption is reduced, but internal pressure increases and particles are generated causing film deposition uniformity to deteriorate
Solution Approach 1:
The system performs preliminary actions before long-term stopping by reducing the flow rate of source gas to a predetermined low flow rate, and before resuming by performing preflow to discharge accumulated particles. This prevents particle accumulation during stopping and ensures clean film deposition when resuming, resolving the contradiction between energy saving and deposition uniformity.
Solution Approach 2:
The system changes the flow rate parameter of source gas based on operational state: maintaining normal flow rate during active processing, reducing to low flow rate during stopping to prevent pressure buildup, and using elevated flow rate during preflow to clear particles. This dynamic parameter adjustment resolves the contradiction between energy consumption and film quality.
2Reliability
If preflow is performed to discharge particles before starting film deposition, then particle contamination is reduced, but processing time increases
Solution Approach 1:
The system performs preflow as a preliminary action before film deposition to discharge particles accumulated in pipes and source tank. By timing this particle discharge operation to occur before substrate processing begins, the system ensures particle-free deposition without significantly impacting overall production efficiency, as particles are cleared during natural system preparation time.
3Reliability
If the flow rate of source gas is reduced to a low flow rate before stopping, then particle accumulation is prevented, but the stopping process becomes more complex
Solution Approach 1:
The system changes the flow rate parameter from normal operation level to a predetermined low flow rate before stopping. This simple parameter adjustment prevents pressure buildup and particle generation in the source tank and pipes during idle periods, while the control system automatically manages the transition, keeping the added complexity minimal.
4Productivity
If reaction gases are supplied directly to substrates during film deposition, then deposition efficiency is improved, but synchronization issues cause uneven film deposition
Solution Approach 1:
The system performs preliminary actions by controlling the timing of reaction gas supply to occur after the turntable has rotated to the correct position. This ensures that gases are supplied to the intended substrates in sequence, maintaining both high deposition efficiency and uniform film quality across multiple substrates without synchronization problems.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces the negative impact of particles on the substrate process, maintaining uniformity and preventing defects by managing the fluid flow to isolate potential particle contamination, thus enhancing the reliability and consistency of the film deposition process.
Implementation Method 1
a source gas is flown to a pump without passing the chamber before starting the film deposition process
Implementation Method 2
the plurality of substrates on a turntable provided in a processing chamber along a circumferential direction of the turntable and then rotating the turntable
Implementation Method 3
one (reaction gas A) of two types of reaction gases that react with each other is adsorbed on a substrate surface
Implementation Method 4
the other one (reaction gas B) of the two types of reaction gases is caused to react with the reaction gas A adsorbed on the substrate surface, steps of which are repeated
Implementation Method 5
a deposited film is heated to a predetermined temperature
Data Source
AI summary
A substrate processing method is provided. In the method, a plurality of substrates is placed on a plurality of substrate holding areas provided in a surface of a turntable at predetermined intervals in a circumferential direction, the turntable being provided in a processing chamber. Next, the turntable on which the plurality of substrates is placed is rotated. Then, a fluid is supplied to the surface of the turntable while rotating the turntable. Here, the fluid is supplied to an area between the plurality of substrate holding areas in response to an operation of changing a flow rate of the fluid.