Substrate Processing Gas Cycling for Uniform 3D Film Coverage

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Solution Overview

Problem

Existing substrate processing methods face challenges in achieving optimal step coverage of films formed on substrates, particularly in three-dimensional structures with trenches or grooves.

Innovation Solution

A method involving alternating supply of first and second processing gases through separate storage tanks and ports, with intermediate exhaust phases, to enhance film formation on substrates.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Device complexity

If a single storage tank and single supply port are used for processing gas supply, then the device complexity is reduced, but the film step coverage on three-dimensional substrates deteriorates

Engineering Contradiction:
Improvegas supply system complexityVSAvoidfilm step coverage
Core Design Contradiction:
Device complexityVSManufacturing precision

Solution Approach 1:

The gas supply system is segmented into multiple storage tanks (first storage tank, second storage tank) and multiple supply ports (first supply port, second supply port). Each storage tank supplies processing gas through dedicated supply ports at different positions, enabling differentiated gas distribution to improve film step coverage on three-dimensional substrates without requiring complex centralized control systems.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Different supply ports are positioned at different locations to provide processing gas with different flow characteristics to different regions of the substrate. The first supply port and second supply port are arranged to create localized gas flow patterns that enhance gas penetration into trenches and grooves, achieving uniform film deposition across complex substrate topographies.

Inventive Principle:
Principle #3Local quality

2Productivity

If processing gas is supplied continuously without intermediate exhaust, then the productivity is improved, but the film deposition uniformity deteriorates

Engineering Contradiction:
Improvefilm formation speedVSAvoidfilm deposition uniformity
Core Design Contradiction:
ProductivityVSManufacturing precision

Solution Approach 1:

The film formation process uses periodic alternating supply of first processing gas and second processing gas through different storage tanks and supply ports. This periodic action creates distinct deposition phases that ensure uniform film formation across the substrate surface while maintaining efficient productivity through continuous cyclic operation without complete system idle time.

Inventive Principle:
Principle #19Periodic action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Improves film step coverage on substrates by ensuring uniform deposition across complex topographies, enhancing the quality and consistency of film formation.

Implementation Method 1

supplying a first processing gas to the substrate... forming a film on the substrate

Methodology Applied
Scientific EffectChemical Vapour Deposition: Chemical Vapour Deposition

Implementation Method 2

supplying a second processing gas to the substrate... forming a film on the substrate

Methodology Applied
Scientific EffectChemical Vapour Deposition: Chemical Vapour Deposition

Data Source

PatentEP4596751A1Method of processing substrate, method of manufacturing semiconductor device, program, and substrate processing apparatus
Publication Date: 2025.08.06 KOKUSAI DENKI KK
  • EP4596751A1 patent drawingFigure 1
  • EP4596751A1 patent drawingFigure 2
  • EP4596751A1 patent drawingFigure 3

AI summary

There is provided a technique that includes: forming a film on the substrate by performing a first cycle a predetermined number of times, the first cycle including performing: (a) supplying a first processing gas to the substrate; and (b) supplying a second processing gas to the substrate, wherein (a) includes sequentially performing: (a-1) opening a first storage filled with the first processing gas and supplying the first processing gas discharged from the first storage to the substrate via a first supply port; (a-2) exhausting a processing space in which the substrate is processed while stopping the supply of the first processing gas to the substrate; and (a-3) opening a second storage filled with the first processing gas and supplying the first processing gas discharged from the second storage to the substrate via a second supply port different from the first supply port.