Substrate Processing Gas Exhaust Sequencing for Faster Film Deposition

Solution Overview

Problem

The challenge in forming low-resistance films, such as molybdenum films, is the prolonged discharge time of reactant gases from the processing container, which affects processing throughput.

Innovation Solution

A substrate processing apparatus and method that includes a controlled gas supply and exhaust system, utilizing inert gases to purge and separate reactant gases efficiently, reducing the discharge time and improving throughput.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If the amount of supply of reactant gas is increased to achieve low-resistance film formation, then film quality is improved, but discharge time becomes large

Engineering Contradiction:

Improvefilm qualityVSAvoiddischarge time

Core Design Contradiction:

Manufacturing precisionVSLoss of time

Solution Approach 1:

The exhaust system is divided into a processing container and a detoxifier as separate components. The reactant gas is discharged from the processing container to the detoxifier through a pump, allowing the discharge process to be segmented and controlled independently, thereby reducing the overall discharge time while maintaining film quality.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

A pump is introduced as an intermediary device between the processing container and the detoxifier to actively discharge the reactant gas. This intermediary mechanism enables controlled and efficient gas removal, reducing discharge time while preserving the quality of the formed low-resistance film.

Inventive Principle:

Principle #24Intermediary (Mediator)

2Productivity

If the amount of supply of reactant gas is increased to improve deposition rates, then processing efficiency is improved, but gas discharge time increases

Engineering Contradiction:

Improveprocessing throughputVSAvoiddischarge time

Core Design Contradiction:

ProductivityVSLoss of time

Solution Approach 1:

The exhaust system is divided into a processing container and a detoxifier as separate components. The reactant gas is discharged from the processing container to the detoxifier through a pump, allowing the discharge process to be segmented and controlled independently, thereby reducing the overall discharge time while maintaining film quality.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

A pump is introduced as an intermediary device between the processing container and the detoxifier to actively discharge the reactant gas. This intermediary mechanism enables controlled and efficient gas removal, reducing discharge time while preserving the quality of the formed low-resistance film.

Inventive Principle:

Principle #24Intermediary (Mediator)

Data Source

PatentUS20250223692A1Substrate processing method, method of manufacturing semiconductor device, recording medium and substrate processing apparatus

Publication Date: 2025.07.10 KOKUSAI DENKI KK

AI summary

A technique comprises: (a) supplying a first processing gas into the processing container when exhausting of the atmosphere in the processing container is stopped; (b) exhausting the atmosphere in the processing container to the first exhaust pipe and the storage of the second exhaust pipe when the exhaust valve is closed and the air supply valve is opened, after (a); (c) exhausting the atmosphere in the processing container by the first exhaust pipe when the air supply valve is closed to stop the exhaust of the atmosphere in the processing container by the storage, after (b); (d) supplying a second processing gas into the processing container when the air supply valve is closed to stop the exhaust of the atmosphere in the processing container by the storage, after (c); and (e) performing (a) to (d) to process the substrate in the processing container.