Substrate Processing Gas Flow Kinetic Energy Control
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Solution Overview
Problem
Existing substrate processing apparatuses face challenges in efficiently removing residual processing liquids from the peripheral portions of substrates without causing splashes that can enter the device region, leading to defects in the device pattern and reduced processing efficiency due to incomplete etching and heating inefficiencies.
Innovation Solution
A substrate processing apparatus that includes a rotating mechanism, a processing liquid discharge unit, and a gas discharge unit, where the gas discharge unit uses two inert gas flows with different kinetic energies to effectively remove residual processing liquids from the substrate's peripheral portion while preventing splashes from reaching the device region, and a heating mechanism that preheats inert gas to maintain efficient heating by isolating the atmosphere between the substrate and the heater.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a single high-kinetic-energy gas flow is used to remove residual processing liquid, then the processing efficiency is improved, but splashes are generated that can enter the device region causing defects
Solution Approach 1:
The gas discharge unit is divided into multiple gas discharge mechanisms that discharge gas flows at different positions and with different kinetic energies. Specifically, one mechanism discharges high-kinetic-energy gas to efficiently remove residual processing liquid, while another discharges low-kinetic-energy gas to suppress splashes, thereby resolving the contradiction between processing efficiency and splash prevention
Solution Approach 2:
Different regions of the substrate peripheral portion receive gas flows with different properties. The region requiring aggressive cleaning receives high-kinetic-energy gas flow, while regions prone to splash generation receive low-kinetic-energy gas flow. This localized differentiation allows simultaneous achievement of high processing efficiency and splash suppression
2Temperature
If the substrate is heated efficiently by exposing the space between substrate and heater to atmosphere, then heat dissipation is improved, but heating efficiency decreases due to heat loss
Solution Approach 1:
A gas flow serves as an intermediary substance between the heater and the substrate peripheral portion. This gas flow creates a thermal barrier that reduces heat loss to the surrounding atmosphere while still allowing the substrate to be heated efficiently. The gas flow mediates between the heating requirement and the heat dissipation need
Solution Approach 2:
The gas flow discharged onto the substrate peripheral portion creates a localized inert atmosphere that acts as thermal insulation. This inert gas environment reduces convective heat loss from the substrate to the surrounding air, thereby improving heating efficiency while maintaining appropriate temperature distribution
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The apparatus effectively drains residual processing liquids from the substrate's peripheral portion, reduces splashes that could enter the device region, and maintains efficient heating, thereby improving processing efficiency and preventing damage to the substrate's lower surface.
Implementation Method 1
The gas discharge unit is configured to discharge a gas flow of an inert gas toward a position upstream from the landing position in a direction of rotation of the substrate in the rotation path so as to drain a residual processing liquid in a peripheral portion of an upper surface of the substrate being rotated
Implementation Method 2
a heating mechanism that preheats inert gas to maintain efficient heating by isolating the atmosphere between the substrate and the heater
Data Source
AI summary
A substrate processing apparatus includes a substrate holder, a rotating mechanism, a processing liquid discharge unit, and a gas discharge unit. The processing liquid discharge unit discharges a liquid flow of a processing liquid such that the liquid flow comes into contact with a landing position in a rotation path of a peripheral portion of an upper surface of the substrate being rotated. The gas discharge unit discharges a first gas flow of an inert gas from above toward a first position upstream from the landing position in a direction of rotation of the substrate in the rotation path, and discharges a second gas flow of the inert gas from above toward a second position upstream from the first position in the direction of rotation of the substrate in the rotation path. The kinetic energy of the second gas flow is lower than the kinetic energy of the first gas flow.