Substrate Processing Gas Flow Uniformity Control
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Solution Overview
Problem
The miniaturization of semiconductor devices has reached a limit due to challenges in oxide embedding and the requirement for uniform thin gate insulating films, leading to difficulties in improving processing uniformity and throughput while maintaining product quality.
Innovation Solution
A substrate processing apparatus with a gas rectifying part and conductance adjustment mechanism that adjusts gas flow uniformity around the substrate, using multiple gas pressure equalizing spaces and purge gas supply to ensure consistent film formation across the substrate surface.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If conventional CVD method is used for oxide embedding, then processing is simple, but processing uniformity deteriorates for miniaturized structures
Solution Approach 1:
The patent introduces a gas flow adjustment structure with multiple nozzles positioned at different locations (center and periphery) to provide non-uniform gas distribution tailored to local requirements. This allows different regions of the substrate to receive appropriate gas flow rates for their specific processing needs, thereby achieving high processing uniformity for miniaturized structures while maintaining CVD simplicity.
Solution Approach 2:
The patent modifies the gas flow parameters by introducing a gas flow adjustment structure that controls the distribution and rate of reactant gas delivery. By adjusting gas flow rates and distribution patterns through the multi-position nozzle system, the patent achieves uniform oxide embedding even in miniaturized deep grooves, resolving the contradiction between processing simplicity and uniformity.
2Productivity
If gas flow rate is increased to improve productivity, then throughput improves, but processing uniformity deteriorates
Solution Approach 1:
The gas flow adjustment structure with multiple nozzles at different positions enables localized control of gas flow rates. This allows the system to optimize gas delivery to specific regions (center vs. periphery) based on their individual requirements, maintaining processing uniformity even when overall gas flow rates are increased to improve throughput.
Solution Approach 2:
The patent introduces a controllable gas flow adjustment mechanism that can dynamically regulate gas distribution patterns. This dynamic control allows the system to adapt gas flow rates to match substrate requirements, enabling high throughput while preserving processing uniformity through real-time optimization of gas delivery parameters.
3Productivity
If processing time is reduced to improve productivity, then throughput improves, but film quality deteriorates
Solution Approach 1:
The gas flow adjustment structure enables optimization of gas delivery parameters to achieve rapid and uniform oxide formation. By controlling gas flow rates and distribution patterns, the system can reduce processing time while maintaining high film quality, as the optimized gas parameters ensure efficient and uniform reaction across the substrate surface.
Solution Approach 2:
The multi-position nozzle system provides localized gas flow control that ensures each region of the substrate receives appropriate reactant concentrations for high-quality film formation. This localized optimization allows the system to maintain film quality even when overall processing time is reduced, as the gas distribution is tailored to match the accelerated processing requirements.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enhances processing uniformity and throughput by adjusting gas flow conductance, allowing for precise control of film thickness and quality across the substrate, addressing the limitations of current technologies in miniaturization and uniformity.
Implementation Method 1
a gas pressure equalizing part configured to equalize a pressure of a purge gas supplied from a plurality of locations
Implementation Method 2
supplying the purge gas having a equalized pressure in the gas pressure equalizing part to an outer periphery end side of the substrate support part, and adjusting an exhaust conductance of any one of at least the first gas and the second gas
Implementation Method 3
a gas rectifying part installed in a substrate processing apparatus having a process chamber installed with a substrate support part configured to support a substrate, including: an opening through which a first gas and a second gas supplied to the substrate pass
Data Source
AI summary
A substrate processing apparatus includes a process chamber including a process space configured to accommodate a substrate; a substrate support part including a substrate mounting stand; a first gas supply part; a second gas supply part; a gas introduction port configured to introduce a gas from the first gas supply part or the second gas supply part; a gas rectifying part including an opening through which the gas introduced from the gas introduction port passes; a gas flow passage communicated with the opening and formed between the gas rectifying part and an outer periphery of the substrate mounting stand in a circumferential direction; a gas pressure equalizing part including at least two gas pressure equalizing spaces; a purge gas supply part configured to supply different amount of a purge gas to each of the at least two gas pressure equalizing spaces; and a conductance adjustment part.