Substrate Processing Gas Supply Segmentation
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Solution Overview
Problem
Current batch-type substrate processing equipment lacks the ability to individually control the amount of processing gas supplied to each substrate, resulting in inconsistent thin film thickness across multiple substrates.
Innovation Solution
A substrate processing apparatus with a tube structure that includes a first gas supply part for uniformly distributing a main source gas and a second gas supply part with injectors and gas supply lines to selectively supply additional gases to each substrate, allowing for individual control of gas flow and distribution.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If a single processing gas supply line is used to supply gas to all substrates, then the device structure is simple, but the gas supply amount to each substrate cannot be individually controlled
Solution Approach 1:
The gas supply system is segmented into multiple independent gas supply lines, with each line corresponding to a specific substrate position. This segmentation allows independent control of gas flow to each substrate, enabling precise control of thin film thickness for each substrate while maintaining a relatively simple overall structure.
Solution Approach 2:
The patent implements local quality control by providing individual gas supply lines with adjustable flow rates for each substrate position. This allows the gas supply conditions to be optimized locally for each substrate based on its specific processing requirements, ensuring uniform thin film thickness across all substrates.
2Device complexity
If a single processing gas supply line is used, then the device structure is simple, but the processing gas concentration on each substrate cannot be separately controlled
Solution Approach 1:
The gas supply system is divided into multiple independent channels, each with its own flow control mechanism. This segmentation enables separate control of processing gas concentration for each substrate, ensuring consistent processing quality across all substrates while keeping the device structure manageable.
Solution Approach 2:
The patent employs flow control valves on each gas supply line to independently adjust the flow rate and concentration of processing gas for each substrate. This parameter control capability ensures that each substrate receives the optimal gas concentration for its specific processing requirements, maintaining high reliability and consistency in processing quality.
3Manufacturing precision
If individual gas supply control is implemented for each substrate, then thin film thickness can be controlled uniformly, but the device complexity increases
Solution Approach 1:
The gas supply system is segmented into multiple independent lines, each dedicated to a specific substrate position. This segmentation achieves uniform thin film thickness control while maintaining a structured and organized system layout that limits overall complexity.
Solution Approach 2:
The patent uses standardized gas supply components and control mechanisms that can be replicated across multiple substrate positions. This universal approach allows individual control for each substrate while avoiding the need for completely unique systems for each position, thereby controlling device complexity.
4Productivity
If individual gas supply control is implemented, then processing efficiency is improved, but the device complexity increases
Solution Approach 1:
The gas supply system is segmented into independent controllable channels for each substrate, enabling parallel processing and improving productivity. The segmented structure is organized in a systematic manner that prevents excessive complexity from arising.
Solution Approach 2:
The patent implements dynamic control capabilities with adjustable flow rates for each gas supply line, allowing the system to adapt to different processing requirements. This dynamic control improves processing efficiency while the modular structure keeps device complexity manageable.
Data Source
AI summary
Provided is a substrate processing apparatus. The substrate processing apparatus includes a tube having an inner space, a substrate support on which a plurality of substrates are stacked in multistage within the tube, the substrate support individually defining a plurality of processing spaces in which the plurality of substrates are respectively processed, a first gas supply part configured to supply a first gas into all the plurality of processing spaces, a second gas supply part comprising a plurality of injectors disposed to respectively correspond to the plurality of processing spaces so that the second gas is individually supplied onto each of the plurality of substrates, and an exhaust part configured to exhaust the gases within the tube. Thus, the gas may be individually supplied into each of the processing spaces in which the plurality of substrates are respectively processed.