Substrate Gas Supply Layout for Film Thickness Distribution Control
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Solution Overview
Problem
Existing substrate processing technologies face challenges in achieving precise control over the thickness distribution of films formed on substrates, particularly in semiconductor device manufacturing.
Innovation Solution
A substrate processing apparatus is designed with a gas supply system that includes multiple gas supply ports to supply process gases to the substrate from different directions, allowing for improved control over the film thickness distribution by adjusting the gas flow angles and ratios.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If a single gas supply port is used to supply process gas to the substrate, then the device complexity is reduced, but the controllability of film thickness distribution deteriorates
Solution Approach 1:
The gas supply system is divided into multiple independent gas supply ports (first gas supply port and second gas supply port), each capable of supplying process gas from different directions. This segmentation allows independent control of gas flow to different regions of the substrate, enabling precise control over film thickness distribution while maintaining a relatively simple overall device structure.
Solution Approach 2:
Different gas supply ports are positioned to supply process gas to different local regions of the substrate from different directions. The first gas supply port supplies gas along a first supply direction while the second gas supply port supplies gas along a second supply direction, creating locally optimized gas distribution that achieves desired film thickness profiles in specific areas of the substrate.
2Manufacturing precision
If gas is supplied from multiple directions to improve film thickness uniformity, then the manufacturing precision is improved, but the device complexity increases
Solution Approach 1:
Each gas supply port is designed with multi-functionality, capable of supplying process gas to multiple regions of the substrate from different directions. The gas supply system as a whole serves multiple functions: controlling film thickness distribution, achieving different thickness profiles (central convex, flat, central concave), and maintaining uniformity across the substrate, all within a single integrated system.
Solution Approach 2:
The gas supply system transitions from single-direction gas flow to multi-directional gas flow by introducing gas supply ports at different angular positions. This dimensional change in gas flow directionality enables control over film thickness distribution in both radial and angular dimensions, achieving superior thickness uniformity and profile control without proportionally increasing device complexity.
3Ease of manufacture
If the gas supply system is simplified, then the ease of manufacture is improved, but the ability to achieve desired thickness profiles deteriorates
Solution Approach 1:
The gas supply system is segmented into a limited number of strategically positioned gas supply ports rather than using a complex distributed array. This segmentation approach achieves the desired thickness profiles (central convex, flat, or central concave) while maintaining ease of manufacture by reducing the number of components and simplifying the overall system architecture.
Solution Approach 2:
The system achieves different thickness profiles by changing the operational parameters of the gas supply ports, such as gas flow rates and supply directions, rather than requiring different physical configurations. This allows a single manufactured system to produce multiple thickness profiles through parameter adjustment, maintaining ease of manufacture while achieving manufacturing precision.
Data Source
AI summary
Described herein is a technique capable of improving the controllability of firm thickness distribution. According to one aspect of the technique, there is provided a substrate processing apparatus including: a process chamber; a first and a second gas supply system; an exhaust system; and a controller for controlling the first and the second gas supply system and the exhaust system to form a film. The first gas supply system includes: a first and a second storage part; a first gas supply port for supplying a gas stored in the first storage part from an outer periphery toward a center of a substrate; and a second gas supply for supplying the gas stored in the second storage part from the outer periphery along a direction more inclined toward the outer periphery than a direction from the outer periphery toward the center of the substrate.