Substrate Film Deposition Gas Layout for Thickness Uniformity
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Solution Overview
Problem
Existing methods struggle to achieve uniform film thickness distribution on substrates during semiconductor manufacturing processes.
Innovation Solution
A method involving a cycle of supplying a precursor and a reactant to a substrate while exhausting gases, with the introduction of an inert gas from a third supplier at a specific region partitioned by a bisector perpendicular to the exhaust port, to regulate film thickness uniformity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a precursor and reactant are supplied to form a film on a substrate, then film formation is achieved, but film thickness uniformity across the substrate surface deteriorates
Solution Approach 1:
The patent introduces an inert gas supplier positioned at a specific location (one end of the substrate in the width direction) to create local gas flow characteristics. This local quality approach modifies the gas distribution pattern specifically in regions where uniformity problems occur, without changing the overall film formation process. The inert gas creates a flow that compensates for non-uniform precursor or reactant distribution, thereby improving film thickness uniformity while maintaining the basic film formation operation.
2Manufacturing precision
If gas supply and exhaust operations are performed to form a film, then film deposition is achieved, but control over film thickness distribution deteriorates
Solution Approach 1:
The patent introduces an inert gas as an intermediary substance that mediates between the precursor/reactant supply and the exhaust system. This inert gas, supplied from a dedicated supplier positioned at a specific location, acts as a flow controller that improves film thickness distribution without requiring complex modifications to the existing gas supply or exhaust infrastructure. The inert gas creates a controlled flow pattern that enhances uniformity while adding minimal complexity to the overall system.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enhances the uniformity of film thickness across the substrate surface, improving the consistency and quality of semiconductor device manufacturing.
Implementation Method 1
supplying an inert gas from a third supplier into a process chamber from a region, which is a region on a side of an exhaust port among a plurality of regions partitioned in the process chamber by a bisector perpendicular to a straight line connecting a first supplier and the exhaust port in a plane view
Implementation Method 2
forming a film on a substrate in a process chamber by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a) supplying a precursor from a first supplier to the substrate in the process chamber
Data Source
AI summary
There is provided a technique that includes: forming a film on a substrate in a process chamber by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a) supplying a precursor from a first supplier to the substrate and exhausting the precursor from an exhaust port installed opposite to the first supplier with the substrate interposed between the exhaust port and the first supplier; and (b) supplying a reactant from a second supplier to the substrate and exhausting the reactant from the exhaust port, wherein in (a), inert gas is supplied into the process chamber from a third supplier installed at a region, which is a region on a side of the exhaust port among a plurality of regions partitioned in the process chamber by a bisector perpendicular to straight line connecting the first supplier and the exhaust port in a plane view.