Substrate Processing Apparatus Gas-Liquid Separator High-Speed Rotation
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Solution Overview
Problem
Conventional substrate processing apparatuses face difficulties in rotating substrates at high speeds due to significant pressure loss in the flow channel, which hampers the efficient discharge of gas and reduces etching accuracy of the peripheral edge.
Innovation Solution
The apparatus includes a substrate rotating unit, a gas-liquid separator, and an exhaust route, where the gas-liquid separator is positioned to separate gas and liquid droplets efficiently, and the exhaust route is designed to minimize pressure loss, allowing for smooth gas discharge even at high substrate rotation speeds.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the substrate is rotated at high speed to improve etching accuracy of the peripheral edge, then the etching precision is improved, but the pressure loss in the flow channel increases significantly
Solution Approach 1:
The exhaust system is segmented into multiple exhaust ports distributed around the peripheral edge of the substrate, rather than using a single centralized exhaust. This segmentation allows the gas flow path to be divided into multiple shorter segments, reducing the overall flow channel length and minimizing pressure loss while maintaining effective gas discharge at high rotation speeds
Solution Approach 2:
The exhaust ports are positioned in the radial direction from the center of the substrate, utilizing the radial dimension to create short exhaust paths. This dimensional arrangement allows gas to be discharged efficiently without requiring long axial flow channels, thereby reducing pressure loss while supporting high-speed rotation for improved etching accuracy
2Manufacturing precision
If the substrate is rotated at high speed to prevent liquid droplet spattering, then the etching precision is improved, but the gas discharge efficiency decreases due to pressure loss
Solution Approach 1:
Multiple exhaust ports are positioned at different radial locations around the substrate periphery, segmenting the gas discharge function. This allows efficient gas evacuation from different regions simultaneously, maintaining high gas discharge efficiency even when the substrate rotates at high speeds to prevent liquid droplet spattering and improve etching precision
Solution Approach 2:
The exhaust ports act as intermediary discharge points between the processing region and the external environment. By providing multiple intermediate exhaust locations around the periphery, the system efficiently mediates gas removal without requiring long flow paths, thus maintaining gas discharge efficiency while enabling high-speed rotation for droplet control
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enables high-speed rotation of substrates during etching, preventing liquid droplet spattering and improving the accuracy of etching the peripheral edge while reducing pressure loss and flow channel resistance.
Implementation Method 1
a gas-liquid separator (54) is provided so as to surround an outer circumference of the substrate rotating unit (20) to separate gas and liquid droplets
Data Source
AI summary
A substrate processing apparatus according to an aspect of the present disclosure includes a substrate rotating unit, a gas-liquid separator, and an exhaust route. The substrate rotating unit is configured to hold and rotate a substrate. The gas-liquid separator is provided so as to surround an outer circumference of the substrate rotating unit to separate gas and liquid droplets. The exhaust route is provided so as to surround an outer circumference of the gas-liquid separator and discharges the gas separated by the gas-liquid separator.