Substrate Processing Gas Phase Layer Pattern Collapse Prevention
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Solution Overview
Problem
Current substrate processing methods face challenges in effectively removing particles from substrates without causing pattern collapse due to high surface tension of rinse liquids, and existing solutions like using isopropyl alcohol may still result in pattern collapse if the liquid remains inside the pattern for too long or if the pattern is weak.
Innovation Solution
A substrate processing method involving a solute and volatile solvent to form a particle holding layer, followed by a peeling liquid to remove the layer, and then a low surface-tension liquid film to prevent pattern collapse by forming a gas phase layer that holds the liquid film outside the pattern, allowing for efficient particle removal and drying.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a dissolution processing liquid is supplied to dissolve a particle holding layer, then particles can be removed from the substrate, but particles may drop from the dissolving layer and adhere again to the substrate
Solution Approach 1:
The particle holding layer is formed in advance before particle removal, allowing particles to be securely held in a structured layer that can be systematically removed without particles dropping and re-adhering to the substrate
2Manufacturing precision
If a rinse liquid with high surface tension is used to wash away processing liquid, then washing effectiveness is improved, but the pattern may collapse due to surface tension acting on the pattern
Solution Approach 1:
A gas phase layer is introduced as an intermediary between the rinse liquid and the pattern, allowing the rinse liquid to wash away processing liquid without its surface tension directly acting on the pattern, thus preventing pattern collapse while maintaining washing effectiveness
3Strength
If isopropyl alcohol is used to replace water inside the pattern, then surface tension is reduced to prevent pattern collapse, but the pattern may still collapse if the liquid remains for too long or if the pattern is weak
Solution Approach 1:
The mechanical presence of liquid inside the pattern is replaced by a gas phase layer, eliminating the surface tension force entirely rather than merely reducing it with alcohol, thus preventing pattern collapse regardless of liquid residence time or pattern strength
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables satisfactory removal of particles from the substrate surface while preventing pattern collapse by positioning the liquid film interface outside the pattern, ensuring no surface tension acts on the pattern, thus effectively drying the substrate.
Implementation Method 1
the substrate is heated to volatilize at least partially the solvent from the first processing liquid supplied to the upper surface of the substrate and, thereby, the first processing liquid is solidified or hardened to form a particle holding layer on the upper surface of the substrate
Implementation Method 2
the substrate is heated to evaporate the second processing liquid in contact with the upper surface of the substrate, thereby forming a gas phase layer which holds the liquid film between the upper surface of the substrate and the liquid film
Data Source
AI summary
A substrate processing method includes a first processing liquid supplying step of supplying a first processing liquid to an upper surface of a substrate, a holding-layer forming step of solidifying or curing the first processing liquid to form a particle holding layer on the upper surface of the substrate, a holding-layer removing step of peeling and removing the particle holding layer from the upper surface of the substrate, a liquid film forming step of forming, after removal of the particle holding layer from the substrate, a liquid film of a second processing liquid, a gas phase layer forming step of forming a gas phase layer for holding the liquid film between the upper surface of the substrate and the liquid film, and a liquid film removing step of removing the second processing liquid from the upper surface of the substrate by moving the liquid film on the gas phase layer.