Substrate Gas Residence Time Control for Film Rate and Step Coverage
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Solution Overview
Problem
The challenge in semiconductor manufacturing is the imbalance between high decomposition rates of process gases leading to deteriorated step coverage and low decomposition rates resulting in reduced film formation rates during substrate processing.
Innovation Solution
A substrate processing apparatus and method that control the decomposition rate of process gases by regulating the residence time and flow velocity based on a predetermined relationship, ensuring uniform gas distribution and pressure across the substrate surface.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a high decomposition rate of process gas is used, then film formation rate is improved, but step coverage deteriorates
Solution Approach 1:
The patent applies dynamics by making the gas flow velocity variable over time during the film formation process. The gas flow velocity is set to increase in the middle stage compared to the initial and final stages, creating a dynamic process that optimizes both film formation rate and step coverage at different time points rather than using a constant velocity throughout.
Solution Approach 2:
The patent changes the parameter of gas flow velocity at different stages of the process. By adjusting the gas flow velocity to be higher in the middle stage and lower in the initial and final stages, the patent optimizes the decomposition rate of process gas to achieve both high film formation rate and good step coverage simultaneously.
2Manufacturing precision
If a low decomposition rate of process gas is used, then step coverage is improved, but film formation rate is reduced
Solution Approach 1:
The patent applies dynamics by making the gas flow velocity variable over time during the film formation process. The gas flow velocity is set to increase in the middle stage compared to the initial and final stages, creating a dynamic process that optimizes both film formation rate and step coverage at different time points rather than using a constant velocity throughout.
Solution Approach 2:
The patent changes the parameter of gas flow velocity at different stages of the process. By adjusting the gas flow velocity to be higher in the middle stage and lower in the initial and final stages, the patent optimizes the decomposition rate of process gas to achieve both high film formation rate and good step coverage simultaneously.
3Productivity
If gas flow velocity is increased, then film formation rate is improved, but uniformity of gas distribution deteriorates
Solution Approach 1:
The patent applies periodic action by dividing the gas supply process into distinct stages (initial stage, middle stage, final stage) with different gas flow velocity characteristics. This periodic variation in gas flow velocity ensures uniform gas distribution while maintaining high film formation rate, as each stage serves a specific function in the overall process.
Solution Approach 2:
The patent changes the parameter of gas flow velocity at different stages of the process. By adjusting the gas flow velocity to be higher in the middle stage and lower in the initial and final stages, the patent optimizes the decomposition rate of process gas to achieve both high film formation rate and good step coverage simultaneously.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach achieves uniform film formation and enhances processing efficiency by maintaining optimal decomposition rates, thereby improving step coverage and film formation rates.
Implementation Method 1
controlling a decomposition rate of a process gas supplied into the process space
Data Source
AI summary
A technique includes (a) processing a substrate disposed in a process space by controlling a decomposition rate of a process gas supplied into the process space based on a predetermined relationship between the decomposition rate and a residence time of the process gas.