Substrate Processing Gas Sequencing for Stable Exhaust Flow
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Solution Overview
Problem
Unreacted source gas accumulates in the exhaust unit of substrate processing apparatuses, leading to reduced exhaust performance and stability due to reactions with reactant gases, causing blockages and firing issues.
Innovation Solution
A substrate processing method that divides the processing space into multiple regions, sequentially injects and exhausts different gases and purge gases, and uses a rotating supporting unit to prevent unreacted gases from mixing, thereby minimizing reactions and enhancing exhaust efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If unreacted source gas is exhausted through the exhaust unit, then the processing efficiency is improved, but the unreacted source gas accumulates in the exhaust unit and reacts with reactant gas, causing blockage and reducing exhaust stability
Solution Approach 1:
The exhaust unit is divided into multiple exhaust lines (first exhaust line for source gas, second exhaust line for reactant gas) to separate the exhaust paths of different gases. This segmentation prevents mixing and reaction between unreacted source gas and reactant gas in the exhaust system, eliminating blockage issues while maintaining high processing efficiency.
2Productivity
If source gas and reactant gas are injected simultaneously for processing, then the deposition rate is improved, but unreacted gases mix in the exhaust unit causing reactions and blockages
Solution Approach 1:
The exhaust system is segmented into separate exhaust lines for source gas and reactant gas. The first exhaust line exclusively exhausts source gas while the second exhaust line exclusively exhausts reactant gas, preventing harmful reactions between unreacted gases and eliminating blockages in the exhaust system.
Solution Approach 2:
Different exhaust lines act as intermediaries between the processing chamber and the external environment, providing separate pathways that prevent direct contact between source gas and reactant gas in the exhaust system, thereby preventing unwanted reactions.
3Device complexity
If a single exhaust line is used for both source gas and reactant gas, then the device complexity is reduced, but the exhaust performance deteriorates due to gas accumulation and reactions
Solution Approach 1:
The exhaust system is segmented into multiple exhaust lines with dedicated functions. Although this increases structural complexity, it dramatically improves exhaust performance by preventing gas accumulation and reactions, ensuring stable and reliable operation of the substrate processing apparatus.
Data Source
AI summary
The present inventive concept is a substrate processing method in which processing steps are carried out on a substrate supported on a support unit in a processing space that is divided into a first processing area and a second processing area, the substrate processing method comprising: a step in which a first gas and a first purge gas are sprayed in the first processing area; and a step in which a second purge gas and a second gas are sequentially sprayed in the second processing area.