Substrate Processing Gas Supply Distance Segmentation
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing substrate processing technologies face challenges in effectively forming films that fill recesses on semiconductor substrates, as existing methods struggle to selectively deposit materials within concave portions without contaminating the surface.
Innovation Solution
A substrate processing apparatus is designed with distinct gas supply configurations, where an adsorption inhibiting gas is supplied at a greater distance than the source gas, allowing for the formation of an inhibiting layer only at the recess opening, while the source gas is supplied at a shorter distance to reach the recess bottom, enabling a bottom-up film formation process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If source gas is supplied at a short distance to reach the recess bottom, then the film filling capability is improved, but the surface contamination increases
Solution Approach 1:
The gas supply system is segmented into two distinct components: an adsorption inhibiting gas supplier positioned at a first distance (greater distance) and a source gas supplier positioned at a second distance (shorter distance). This segmentation allows each gas to perform its specific function independently - the adsorption inhibiting gas prevents surface contamination while the source gas fills the recess, resolving the contradiction between filling capability and surface contamination.
Solution Approach 2:
Different gas supply distances are applied to different functional requirements: the adsorption inhibiting gas is supplied from a greater distance to selectively inhibit adsorption only at the recess opening area, while the source gas is supplied from a shorter distance to concentrate deposition at the recess bottom. This local differentiation of supply conditions enables simultaneous achievement of surface protection and effective filling.
2Object-affected harmful factors
If adsorption inhibiting gas is supplied at a greater distance, then the surface contamination is prevented, but the gas coverage area is reduced
Solution Approach 1:
The system segments the gas supply function by using two separate gas suppliers with different positioning strategies. The adsorption inhibiting gas supplier is positioned at a greater distance to provide selective surface protection, while the source gas supplier is positioned at a shorter distance to ensure adequate coverage for film deposition. This segmentation compensates for the reduced coverage area of the adsorption inhibiting gas by having the source gas cover the remaining areas.
3Productivity
If source gas is supplied at a short distance, then the deposition efficiency is improved, but the selectivity of deposition is reduced
Solution Approach 1:
The deposition process is segmented into two sequential stages with different gas supply configurations. First, the adsorption inhibiting gas is supplied from a greater distance to create a selective inhibition pattern that protects the surface. Then, the source gas is supplied from a shorter distance to efficiently deposit material in the recess areas where inhibition is minimal. This segmentation enables both high deposition efficiency and precise spatial selectivity.
Solution Approach 2:
The adsorption inhibiting gas is supplied in advance (preliminary action) before or during the source gas supply to pre-establish the selective inhibition pattern on the substrate surface. This preliminary action creates the conditions that enable subsequent high-efficiency deposition only in the desired recess areas, achieving both productivity and selectivity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the filling property of films within recesses by preventing surface contamination and ensuring selective deposition, improving the film's filling capability and productivity.
Implementation Method 1
an adsorption inhibiting gas supplier (232b) provided above the substrate mounting table (210) and configured to supply an adsorption inhibiting gas onto a surface of the substrate
Implementation Method 2
a source gas supplier (232c) provided above the substrate mounting table (210) and configured to supply a source gas onto the surface of the substrate
Data Source
AI summary
Described herein is a technique capable of forming a film so as to fill a recess of a substrate. According to one aspect thereof, there is provided a substrate processing apparatus including: a substrate mounting table on which a substrate is placed; an adsorption inhibiting gas supplier configured to supply an adsorption inhibiting gas onto a surface of the substrate from above the substrate mounting table; and a source gas supplier configured to supply a source gas onto the surface of the substrate from above the substrate mounting table, wherein a distance D1 between a gas supply port provided in the adsorption inhibiting gas supplier and the substrate is greater than a distance D2 between a gas supply port provided in the source gas supplier and the substrate.